| Allicdata Part #: | LM5110-2M-ND |
| Manufacturer Part#: |
LM5110-2M |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Texas Instruments |
| Short Description: | IC DRIVER DUAL 5A NEG VOUT 8SOIC |
| More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC |
| DataSheet: | LM5110-2M Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
| Base Part Number: | LM5110 |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Rise / Fall Time (Typ): | 14ns, 12ns |
| Input Type: | Inverting |
| Current - Peak Output (Source, Sink): | 3A, 5A |
| Series: | -- |
| Voltage - Supply: | 3.5 V ~ 14 V |
| Gate Type: | N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Low-Side |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The LM5110-2M is a high-performance, full-featured peripheral power management integrated circuit (PMIC) designed for driving low-side, high-side and floating power MOSFETs in medium- to high-efficiency power delivery systems. This device operates as a gate driver in PMICs, allowing better flexibility and smaller system solutions.
The primary application field of the LM5110-2M is its ability to be used in applications requiring a single high-current gate drive, such as automotive and industrial power solutions. In addition, it can also be applied in lighting, communications, and renewable energy markets. The LM5110-2M has been designed with a low power operation, making it suitable for portable or battery powered applications.
The main advantage of the LM5110-2M is its high-frequency characteristics. It supports high switching frequencies up to 2MHz, with a minimum on-time of 6ns. This makes it possible to achieve a high power efficiency in the application. Moreover, the 8V clamp-driven output buffers allow the device to drive high-side and low-side MOSFETs efficiently.
The device also has a wide operating temperature range and a very robust Fault Detection & Protection (FDP) feature. The FDP will detect any faults caused by unexpected over-current or over-voltage conditions, and shut down the appropriate drivers. This will prevent any further damage arising from the fault condition. In addition, the LM5110-2M also has a built-in active current sense circuit, which allows for the monitoring of load current.
The working principle of the LM5110-2M is based on the signals received from the input source. All the signals received by the input source are converted by the internal circuitry into signals used by the internal gate driver circuits. The gate drivers then send a signal to the gate electrodes of the MOSFETs, driving them accordingly. This enables the supply of power to the load. In addition, the gate drivers also accept feedback signals from an external control loop, making it possible to control the overall system power delivery. The device also supports a variety of fault protection features.
In summary, the LM5110-2M is a PMIC gate driver designed to provide high performance, high efficiency power delivery solutions. It can be used in automotive, industrial, lighting and communications applications, and is well suited for applications requiring a single high-current gate drive. The device has a very robust FDP feature and is capable of operating at high switching frequencies and low power operation. Its wide operating temperature range and active current sense circuit make it possible to monitor and control the system effectively.
The specific data is subject to PDF, and the above content is for reference
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LM5110-2M Datasheet/PDF