Allicdata Part #: | M25PE20-VMN6P-ND |
Manufacturer Part#: |
M25PE20-VMN6P |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2M SPI 75MHZ 8SO |
More Detail: | FLASH - NOR Memory IC 2Mb (256K x 8) SPI 75MHz 8-... |
DataSheet: | M25PE20-VMN6P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 2Mb (256K x 8) |
Clock Frequency: | 75MHz |
Write Cycle Time - Word, Page: | 15ms, 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | M25PE20 |
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The M25PE20-VMN6P are Memory components designed for a variety of applications, particularly in high-end embedded systems. A wide range of applications is possible due to their low power consumption, flexible architecture, high reliability and small size.
The M25PE20-VMN6P are Flash memories that can store non-volatile memory data in the form of electronic devices using non-volatile memory cells. These non-volatile cells are provided with small geometry and are capable of storing data without power. The most common application of the M25PE20-VMN6P Memory is in embedded systems, where data is stored and programmed at start-up and run-time, making it ideal for applications such as an embedded controller for vehicular systems, a storage medium for embedded operating systems and numerous data logging and data transfer functions.
In terms of working principle, the M25PE20-VMN6P Memory relies on the use of floating gate transistors that store electrons within a thin gate oxide for long term non-volatile data storage. Electrons are stored on a layer of silicon oxide, created by oxidizing or exposing the silicon substrate to oxygen. Data is programmed and stored by the use of Fowler-Nordheim tunneling, in which highly energetic electrons tunnel through the oxide and get stored in the floating gate. The electrons stored in the floating gate can be released by applying an appropriate amount of negative voltage through a charge pump. By reading and writing these electrons, the M25PE20-VMN6P Memory is able to transfer and store data.
Aside from its various applications in embedded systems, the M25PE20-VMN6P Memory can also be used in a variety of other applications, such as in digital audio players, mobile phones, gaming consoles and PDAs. They are also used in data logging and data transfer applications, such as data acquisition boards, embedded systems and aerospace applications. The M25PE20-VMN6P Memory has been designed for high performance, low power consumption and provides reliable data storage in a compact form factor.
The M25PE20-VMN6P Memory components contain various features such as high endurance, secure programming, write protection and high performance. They also feature an optional reset function and on-chip voltage regulators, making them ideal for portable electronic device applications. These components also have an onboard data protection system, allowing secure data transfer and secure storage.
Overall, the M25PE20-VMN6P Memory is a reliable and powerful memory component designed for a wide range of applications. It is a desirable choice for embedded systems and mobile devices that require small footprints, high reliability, fast read and write times, secure storage and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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