Allicdata Part #: | M25P128-VME6G-ND |
Manufacturer Part#: |
M25P128-VME6G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M SPI 50MHZ 8VDFPN |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI 50MHz 8... |
DataSheet: | M25P128-VME6G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 50MHz |
Write Cycle Time - Word, Page: | 15ms, 7ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-VDFPN (MLP8) (8x6) |
Base Part Number: | M25P128 |
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m25p128-vme6g is a type of non-volatile memory. It is largely based on flash memory which is a type of memory that can be erased and reprogrammed as you need it. As this type of memory works without an integrated battery, it can operate even when the power is cut off.
The m25p128-vme6g offers a wide range of applications and functionalities. These include storing programs, data, or instructions which will stay there even when the power is cut off. It is the perfect solution for real-time applications or other projects where redundancy and stability is paramount.
The m25p128-vme6g also provides a low power solution for various applications. It requires less power than other types of non-volatile memory and is therefore more energy efficient. Additionally, it has a higher density than other types of memory. This means that it can hold more data at a given time – which can be a cost-effective solution for many applications.
The working principle of the m25p128-vme6g is unique in many ways. It uses a dual-cell single polysilicon structure which, owing to its construction, increases the accuracy and speed of the memory. In particular, it ensures that all data is reliably stored regardless of the electrical power supply.
The m25p128-vme6g also uses a multilevel dielectric layer which is responsible for the generation of reliable memory cells. This oxide layer is designed to resist the effects of electromigration over long periods. Hence, it ensures a longer lifespan for the m25p128-vme6g and the data stored in it.
Furthermore, the use of a floating gate technology by the m25p128-vme6g also contributes to the strong reliability and endurance of the memory. This technology allows for the transistor to turn off completely, thus allowing for data to be saved more efficiently over time.
The m25p128-vme6g also includes a circuit-based sensing and sensing-based programming system. This unique system ensures that all data is accurately stored for a longer period of time. As a result, data remains safe even in case of power failures.
Overall, the m25p128-vme6g is an excellent choice as a non-volatile memory device due to its wide range of applications, low power consumption and strong reliability. It offers a cost-effective solution and is an ideal choice for many projects. With its unparalleled capabilities and features, it promises to provide an excellent service for many years to come.
The specific data is subject to PDF, and the above content is for reference
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