M39003/01-5079/HSD

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Tantalum capacitors are non-polarized under nominal operating conditions, which makes them ideally suited for applications requiring high energy and relatively stable capacitance values. They are commonly used in analog circuits for providing energy storage due to their excellent stability and reliability characteristics. The M39003/01-5079/HSD is a tantalum chip capacitor specifically designed for a variety of high frequency applications. This article will describe the application field and working principle of the M39003/01-5079/HSD.

The M39003/01-5079/HSD is a tantalum chip capacitor, and is designed for high voltage and high frequency applications, such as radio frequency circuits, medical equipment, and microprocessor applications. Its high volumetric efficiency helps to reduce board space size when compared to other types of capacitors. The M39003/01-5079/HSD also features low equivalent series resistance (ESR) and low leakage current, making it an excellent choice for applications requiring stable capacitance values.

The typical characteristics of the M39003/01-5079/HSD include an operating temperature range from -55 to +125°C, a capacitance range from 10 to 470µF, a voltage rating from 10 to 50Vdc, an insulation resistance of 500MΩ, and a maximum DC current rating of 2.2A.

The key components that make up the M39003/01-5079/HSD are the metallic termination layer, metalized metal film, tantalum core and the dielectric. The metalized metal film is a layer of metal film that is coated with a dielectric material. This provides a reliable and stable barrier between the metal plate and the dielectric material. The tantalum core is the actual capacitive element, which is surrounded by a dielectric material. The metallic termination layer is made up of a combination of nickel/tin/copper, which helps to provide mechanical stability and to protect the component from damage.

The working principle of a tantalum capacitor is based on the electrical charge stored between two layers of metal separated by a dielectric material. When the capacitor is charged, the electric field establishes itself between the two layers of metal. This creates a charge on the dielectric material which results in a capacitance being formed. The capacitance value is dependent on the type, size, spacing and doping of the dielectric material. When a voltage is applied to the capacitor, the electric field reverses and the capacitance value is reduced.

The M39003/01-5079/HSD chip capacitor is an excellent choice for applications requiring reliable energy storage. It offers a wide range of operating temperatures and capacitance values, making it suitable for high voltage and high frequency applications. Its superior construction and low ESR and leakage current provide excellent stability and reliability characteristics during operation.

The specific data is subject to PDF, and the above content is for reference