Operating Temperature:	-55°C ~ 125°C
Failure Rate:	R (0.01%)
Features:	Military
Manufacturer Size Code:	A
Lead Spacing:	--
Height - Seated (Max):	--
Size / Dimension:	0.135" Dia x 0.286" L (3.43mm x 7.26mm)
Package / Case:	Axial
Mounting Type:	Through Hole
Lifetime @ Temp.:	--
Series:	Military, MIL-PRF-39003/1, CSR13
ESR (Equivalent Series Resistance):	--
Type:	Hermetically Sealed
Voltage - Rated:	100V
Tolerance:	±5%
Capacitance:	0.56µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Tantalum Capacitors

Tantalum capacitors are a type of electrolytic capacitor. They have many advantages in comparison with other capacitors, making them an ideal choice for a wide range of applications. Tantalum capacitors are made from either solid manganese dioxide or tantalum oxide dielectric material with a tantalum anode and cathode. Unlike most other types of capacitors, tantalum capacitors have a very high capacitance per volume compared to other types of capacitors, making them ideal for high-density, multi-chip module designs. They are also able to deliver a very low impedance at high frequencies, making them a popular choice for providing power at very high frequencies. This makes them an ideal choice for power supplies in mobile phones, tablet PCs, computers, and other mobile electronics. Additionally, because tantalum capacitors have low leakage current, they are suitable for electronic designs that require high accuracy in stability and output resistance.The M39003/01-5547/HSD is a type of tantalum capacitor designed for use in high-speed applications such as high-speed memory and multimedia storage systems. This type of capacitor is capable of operating at frequencies up to 1.5 GHz and is characterized by low ESR and high ripple current. Additionally, this type of capacitor is specialized for use in high-temperature and harsh environment applications due to its low saturation current and excellent impedance over a wide range of temperatures. The working principle behind the M39003/01-5547/HSD is based on the formation of a thin film, which is composed of tantalum pentoxide and manganese dioxide, on the anode and cathode sides. The thin film acts as a dielectric between the anode and cathode and is able to resist current flow. An external electric field is applied to the anode and cathode, and this creates an electric field within the capacitor, which causes the electrons in the anode to move to the cathode. This movement of electrons creates a current which is proportional to the strength of the external electric field.Overall, the M39003/01-5547/HSD capacitor is an ideal choice for high frequency, high-temperature applications such as high-speed memory and multimedia systems. Its specialized construction ensures a low ESR and high ripple current, while its low saturation current and excellent temperature stability makes it an excellent choice for applications that require high accuracy and stability.

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