MALCE64A Allicdata Electronics

MALCE64A Circuit Protection

Allicdata Part #:

1086-4101-ND

Manufacturer Part#:

MALCE64A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 64V 103V CASE-1
More Detail: N/A
DataSheet: MALCE64A datasheetMALCE64A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 103V
Supplier Device Package: CASE-1
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 14.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 71.1V
Voltage - Reverse Standoff (Typ): 64V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Metal-Oxide-Semiconductor Avalanche-Structure Transient Voltage Suppressors, or MOSAVLTVS, are a diode-based protective device used to protect electrical systems from transient overvoltage surges. This type of diode works by using a combination of a gate oxide layer, a metal-oxide layer, and a semiconductor - usually silicon or gallium arsenide - to provide superior protection from voltage transients. The MOSAVLTVS\'s protective capabilities come from its ability to absorb and dissipate large amounts of electrical energy - up to 10 times the rated energy - when a transient voltage surge occurs.

When exposed to a transient voltage surge, MOSAVLTVS devices rapidly dissipate the surge current by a combination of avalanche breakdown action in the gate oxide layer and by an “avalanche-to-collector” mechanism in the semiconductor. The avalanche-to-collector mechanism is the most influential component in diverting the excess current, as it is able to dissipate most of the energy within a short period of time. The gate oxide layer is made of an insulating material and is responsible for controlling the electrical current in the device.

The MOSAVLTVS is a very versatile device as it can be tailored to meet specific voltage requirements and different operating systems. For example, a device can be tuned to respond to high voltages as low as 10 volts or as high as 1000 volts. The device can also be designed to respond independently to the positive and negative electrical terminals. Additionally, the MOSAVLTVS can be designed to either stay in the on-state continuously, or to turn off after a voltage normalizes.

MOSAVLTVS devices are widely used in portable electronics, including mobile phones, notebook computers, and digital cameras. In these applications, the MOSAVLTVS provides protection against power fluctuations caused by ungrounded power supplies and electrostatic discharge. Additionally, the protection offered by the MOSAVLTVS makes it an ideal choice for high frequency power systems, such as automotive applications.

Metal-oxide semiconductor avalanche-structure transient voltage suppressors are an important tool in the protection of electrical systems from voltage transients. They provide superior protection via their ability to dissipate large amounts of energy when exposed to a transient voltage surge. MOSAVLTVS devices are highly versatile, as they can be tailored to a variety of requirements and operating systems. Furthermore, they are often used in portable electronics and high frequency power systems, as they provide an effective protection against power fluctuations.

The specific data is subject to PDF, and the above content is for reference

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