MAX8702ETP+T Allicdata Electronics
Allicdata Part #:

MAX8702ETP+T-ND

Manufacturer Part#:

MAX8702ETP+T

Price: $ 2.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC DRVR MOSFET DUAL 20-TQFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 20-TQFN (...
DataSheet: MAX8702ETP+T datasheetMAX8702ETP+T Datasheet/PDF
Quantity: 1000
2500 +: $ 1.85744
Stock 1000Can Ship Immediately
$ 2.05
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: MAX8702
Supplier Device Package: 20-TQFN (4x4)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 16ns, 14ns
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Series: --
Voltage - Supply: 4.5 V ~ 28 V
Gate Type: N-Channel MOSFET
Number of Drivers: 4
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The MAX8702ETP+T is part of a broad family of MAX power management integrated circuits (PMICs) manufactured by Maxim Integrated. This device is specially designed to provide safe and accurate gate driving capability to the application fields of MOSFETs, IGBTs and even power bipolar junction transistors (BJTs). This device belongs to the PMIC - Gate Drivers family of products, which are designed to enable efficient and reliable driving of the gate signals in various power electronic applications.

The MAX8702ETP+T is a low-voltage, gate-driver device specifically designed to interface between the high-side FET and the low-side FET. It has two complementary outputs, one for the high-side and one for the low-side FET drive. It is capable of providing a total of 4A (RMS) sourced current and sunk current to drive high-side FETs and low-side FETs.

The MAX8702ETP+T utilizes a unique combination of circuitry to guarantee high performance and maximum safety standards. First, it employs a charge-pump circuit that boosts voltages up to 20V to provide enough voltage to drive the high-side FET. Second, it applies a negative voltage clamp to protect the low-side FET from being damaged by the positive transient of the high-side FET. Additionally, the MAX8702ETP+T is equipped with an internal thermal shutdown circuitry to be activated when the temperature exceeds a certain threshold.

The MAX8702ETP+T also incorporates a slew-rate limiting circuit which is used to limit the rate at which the gate voltages turn off and turn on. This mechanism helps to monitor and reduce the switching losses of the MOSFET and IGBTs, thus increasing their efficiency during operation. It also prevents false triggering of the high-side and low-side FETs, hence reducing the risk of damage due to improper timing.

Furthermore, the MAX8702ETP+T is capable of providing shoot-through protection by means of a programmable dead time delay circuitry. This function is especially useful in half-bridge configuration, where it helps to avoid with an undesired current path between the high-side and the low-side FETs. Finally, the device also allows for the reporting of over-current conditions, by means of a logic output, for informational purposes.

In summary, the MAX8702ETP+T is a great device for driving the gate signals of MOSFETs and IGBTs in various power switching applications. By utilizing its comprehensive set of features and its internal circuitry, this device is capable of ensuring robust performance and maximum safety standards.

The specific data is subject to PDF, and the above content is for reference

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