MBR6045PTG

Series:	SWITCHMODE™
Packaging:	Tube
Part Status:	Obsolete
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io) (per Diode):	30A
Voltage - Forward (Vf) (Max) @ If:	620mV @ 30A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1mA @ 45V
Operating Temperature - Junction:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	TO-218-3
Supplier Device Package:	SOT-93
Base Part Number:	MBR6045PT

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Introduction:

The MBR6045PTG, otherwise known as an integrated gate rectifier, is a diode array designed to provide high current, high-speed switching in power switching applications. It is part of the series of MOSFETs from Texas Instruments and is capable of switching loads up to 20A, as well as offering a low turn on/off time and greater efficiency due to its advanced gate drive circuit.

Application Field:

The MBR6045PTG can be used in a variety of power switching and protection applications, including switch mode power supplies, LED lighting, automotive, telecom, computing and other general purpose applications. Its ability to operate from a 5V to 55V supply voltage makes it ideal for systems with a wide range of supplies. In terms of its specific functionality, the MBR6045PTG is designed to provide high-speed and highly efficient power conversion and current switching. It has been designed to provide reliable switching and protection capabilities in a wide range of applications.

Working Principle:

The primary function of the MBR6045PTG is to provide customers with a cost-effective solution to power switching and protection in a variety of applications. By combining a power MOSFET with an advanced gate driver circuit, the MBR6045PTG offers high-speed and highly efficient power conversion.The MOSFET is a switching device that uses an electric field to open and close its contacts. This field is created by applying a voltage to the gate of the MOSFET. Once the gate voltage is above the threshold voltage, the field will overpower the internal resistance and the MOSFET will turn on allowing current to flow from source to drain.The gate driver circuit operates by providing the voltage necessary to turn the internal MOSFET on and off quickly, allowing for high-speed switching applications. The driver circuit also includes an over-current protection circuit which can protect the MBR6045PTG from current overloads.

Conclusion:

The MBR6045PTG is a diode array designed to provide high current, high-speed switching in power switching applications. It is primarily used for its ability to switch loads up to 20A, turn on/off time and higher efficiency due to its advanced gate drive circuit. It can be used in a variety of power switching and protection applications and operates from a 5V to 55V supply voltage. The primary function of the MBR6045PTG is to provide customers with a cost-effective solution to power switching and protection in a wide range of applications. By combining a power MOSFET with an advanced gate driver circuit, the MBR6045PTG offers high-speed and highly efficient power conversion.

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