MCP14A0602T-E/MNY Allicdata Electronics
Allicdata Part #:

MCP14A0602T-E/MNYTR-ND

Manufacturer Part#:

MCP14A0602T-E/MNY

Price: $ 0.67
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC MOSFET DRIVER 6A 8TDFN
More Detail: Low-Side Gate Driver IC Non-Inverting 8-DFN (2x3)
DataSheet: MCP14A0602T-E/MNY datasheetMCP14A0602T-E/MNY Datasheet/PDF
Quantity: 1000
3300 +: $ 0.59699
Stock 1000Can Ship Immediately
$ 0.67
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Non-Inverting
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)
Description

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PMIC (Power Management Integrated Circuit) are a class of devices used to manage a system’s power consumption. These devices provide a means for controlling multiple subsystems or components in a system, such as voltage regulators, switches, and other components. Gate drivers are specialized PMIC devices used for controlling the gate signals in power switching- and logic-related devices. The MCP14A0602T-E/MNY is a good example of such a gate driver.

The MCP14A0602T-E/MNY gate driver is specifically designed for use in power switching and logic applications. It utilizes a charge pumping circuit to regulate the gate voltage of the driving MOSFETs and can be used to control switching frequencies up to 3MHz. The device is available in surface mount (SMT) and through-hole (TH) packages, allowing flexible use in different applications.

The MCP14A0602T-E/MNY is designed to drive gates with very low resistance and low 1/f noise. It uses an integrated charge pump and slew rate control circuitry to provide a clean, low noise gate signal. This helps to reduce EMI (electromagnetic interference) and overall power dissipation in the system. The MCP14A0602T-E/MNY is capable of driving both high-side and low-side MOSFETs, and can be used in both switching and logic-level application.

The MCP14A0602T-E/MNY gate driver is compatible with a wide range of common logic devices, including: CMOS logic, ESD logic, TTL logic, FET logic, and NAND logic. It also features a wide voltage range of operating input voltage (3.3V to 40V). The device is designed to operate over a wide temperature range (−40°C to +125°C) and is fully compatible with both TAOSABAS2 and TAOSABBS2 mixed signal technologies.

In terms of its working principle, the MCP14A0602T-E/MNY gate driver is a charge-pumping device. It generates a pulse which is used to charge the gate of the MOSFET. This pulse can be used to regulate the gate voltage of the MOSFET, allowing the switch to turn off more quickly. This helps to reduce overall power dissipation in the system and reduces the required gate resistance. The gate driver also features slew rate control circuitry, which is used to control the speed at which the gate voltage is increased and decreased. This helps to reduce EMI by ensuring that the gate voltage does not change too quickly.

The MCP14A0602T-E/MNY gate driver is a versatile device and is suitable for a variety of application fields, such as: power management, motor control, switching power converters, and industrial automation. Its wide input voltage range and operating temperature range make it suitable for many different industries. The device’s low noise, high-speed control, and low power dissipation make it an ideal choice for applications requiring high efficiency and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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