MCP87030T-U/MF Discrete Semiconductor Products |
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| Allicdata Part #: | MCP87030T-U/MFTR-ND |
| Manufacturer Part#: |
MCP87030T-U/MF |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microchip Technology |
| Short Description: | MOSFET N-CH 25V 100A 8PDFN |
| More Detail: | N-Channel 25V 100A (Tc) 2.2W (Ta) Surface Mount 8-... |
| DataSheet: |  MCP87030T-U/MF Datasheet/PDF |
| Quantity: | 1000 |
| 3300 +: | $ 0.43606 |
Specifications
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
| Base Part Number: | MCP87030 |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PDFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1635pF @ 12.5V |
| Vgs (Max): | +10V, -8V |
| Series: | -- |
| Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The MCP87030T-U/MF is an N-Channel Power MOSFET that is part of a series of power MOSFETs from ON Semiconductor. The device has an on-state resistance of 10.3 mΩ, maximal power dissipation of 8.2 W and an operating temperature range of -55C to 175C. The device is designed for applications such as load switches, level shifting, battery- powered equipment, DC-DC conversion and DC-AC conversion.The MCP87030T-U/MF is designed to have the best performance in power management applications. The device is capable of handling high-voltage, high-load applications and has low on-resistance, resulting in low device power loss. The device also has protection circuitry built-in to protect against accidental over-voltage and over-temperature conditions.In terms of its physical structure, the MCP87030T-U/MF includes a central MOSFET structure surrounded by P-Channel and N-Channel wave-shaping circuitry. The device has an N-type MOSFET which is the controlling element for the switching of the device. It has a single gate connection which is used to control the on-state resistance of the device by modulating the gate voltage.When the gate voltage is increased, the on-state resistance of the device decreases, allowing more current to flow. On the other hand, when the gate voltage is decreased, the on-state resistance increases, limiting the current flow. This control of gate voltage helps regulate the current flow and voltage across the device.The temperature of the MCP87030T-U/MF is an essential factor in the control of its performance. The temperature affects the performance of the device, as well as its lifetime. The device is designed to minimize the effects of temperature on its performance, and has a number of temperature-stabilizing measures in place. These include thermally enhanced metal oxide substrate material, metal oxide isolation film layers, optimized design of the metal gates, and an internally designed heat spreader. The device also has a comprehensive set of protection features to prevent over temperature and over voltage conditions. The temperature protection features protect the device from temperatures that exceed 180°C and the voltage protection features prevent over voltage conditions from exceeding 30V on the input side of the device and 30V on the output side.Overall, the MCP87030T-U/MF is a reliable, efficient power MOSFET that is suitable for many applications. It is capable of handling large current levels in high-voltage applications. It has an on-state resistance of 10.3 mΩ and is rated for a maximum of 8.2 W power dissipation. The device also has a comprehensive set of temperature and voltage protection features to ensure optimal performance.
The specific data is subject to PDF, and the above content is for reference
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