MCP87090T-U/MF Allicdata Electronics
Allicdata Part #:

MCP87090T-U/MFTR-ND

Manufacturer Part#:

MCP87090T-U/MF

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 25V 8PDFN
More Detail: N-Channel 25V 64A (Tc) 2.2W (Ta) Surface Mount 8-P...
DataSheet: MCP87090T-U/MF datasheetMCP87090T-U/MF Datasheet/PDF
Quantity: 1000
3300 +: $ 0.24658
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Base Part Number: MCP87090
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V
Vgs (Max): +10V, -8V
Series: --
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The MCP87090T-U/MF is a surface mount, single N-Channel Power MOSFET transistor designed to provide high performance power switching solutions. The MCP87090T-U/MF is designed to maximize performance within the constraints of limited power, heatsink area, and physical package size requirements. It is suitable for a variety of applications including battery management and power distribution systems, motor control, load switching, power conversion, and power switching.

The MCP87090T-U/MF has a frequency limiting feature that enhances the power device’s switching performance. This feature is implemented through a Miller capacitor which provides control of the maximum operating frequency. The Miller capacitor is connected between the gate and drain of the device, allowing for smooth and fast switching.

The MCP87090T-U/MF is a rugged single N-Channel MOSFET transistor and has a wide range of operating parameters. It is highly reliable and provides excellent thermal and electrical stability. The device features low on-state resistance, low power consumption, and low gate charge. The MCP87090T-U/MF also features an on-state current limit and temperature protection features, making it suitable for applications that require a highly reliable and efficient power solution.

The MCP87090T-U/MF has a working voltage of 20Vdc, a current handling capability of 15A, and a drain output current of 20A. The device features a low on-state resistance of 0.023Ω, a maximum on-state voltage of 4V, and a maximum gate threshold voltage of 4V. The device is capable of operating at temperatures ranging from -40°C to 85°C.

The MCP87090T-U/MF works on the principle of MOSFET gate control. The gate of the transistor is a P-type semiconductor that is biased with a positive voltage and current is passed through the gate to the MOSFET channel with a threshold voltage.A higher applied gate voltage increases the drain current, resulting in an on-state condition. This increases the flow of current from the drain to the source of the transistor and the drain voltage decreases. The total current passing through the channel is controlled by the gate voltage.

The MCP87090T-U/MF is commonly used in a variety of applications since it can be used as a switch or amplifier in low voltage applications. It is used in battery management systems, motor controllers, load switching circuits, power conversion and inverter circuits, as well as other power switching applications. In these applications, it is also used to provide fast switching, low power consumption, low gate charging and high reliability.

In addition to its role as a power transistor switch, the MCP87090T-U/MF can also be used as an efficient amplifier. It is capable of providing both high gain and low power consumption. It is also useful in applications that require low noise and high frequency operation, such as communication and automotive electronics.

The MCP87090T-U/MF is a highly reliable and efficient single N-Channel Power MOSFET transistor. It is designed for high performance power switching and is suitable for a variety of applications. It features a low on-state resistance and a wide range of operating parameters, making it an ideal device for power switching and amplification.

The specific data is subject to PDF, and the above content is for reference

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