MHT1001HR5 Allicdata Electronics
Allicdata Part #:

MHT1001HR5-ND

Manufacturer Part#:

MHT1001HR5

Price: $ 125.52
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: IC TRANS RF LDMOS 2450MHZ
More Detail: RF Mosfet LDMOS (Dual) 28V 1.9A 2.39GHz 14dB 40W N...
DataSheet: MHT1001HR5 datasheetMHT1001HR5 Datasheet/PDF
Quantity: 1000
50 +: $ 114.10400
Stock 1000Can Ship Immediately
$ 125.52
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual)
Frequency: 2.39GHz
Gain: 14dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.9A
Power - Output: 40W
Voltage - Rated: 68V
Package / Case: SOT-979A
Supplier Device Package: NI-1230-4H
Description

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MHT1001HR5 is an enhancement mode field effect transistor (FET), which belongs to the category of metal oxide semiconductor FET (MOSFET). It is most often used in radio frequency (RF) applications. This device can be used as a linear amplifier, switch, oscillator and voltage-controlled resistor (VCR).

A MOSFET-based circuit is made up of several components: a drain, a source, a gate, an input capacitor, and a biasing resistor. The source and drain of the MHT1001HR5 are connected to the power supply, and the gate is connected to the input signal. The input capacitor isolates the gate from the high-frequency components of the input signal. The biasing resistor limits the drain current and sets the bias voltage at the gate.

The gate of a MOSFET is like a valve that controls the flow of current between the source and the drain. The input signal applied to the gate controls the amount of current that flows from the source to the drain. With increasing input levels, the current flow increases. When the input voltage is low, the current flow is minimal.

The MHT1001HR5 device is most commonly used in RF circuits. One of the most practical usages of the device is in amplifiers, where it is used to amplify small signals. The device can also be used to create voltage-controlled resistors (VCRs), oscillators, and switches.

RF applications typically require a linear response from the amplifier, and MOSFETs offer superior linearity over other types of FETs. The linearity of the device makes it ideal for applications such as radio communications, CATV modems, and satellite radio.

The MHT1001HR5 has a maximum voltage of 150V and a maximum current of 2.5A. It is designed for operation up to 500 MHz. The device features an advanced process technology and low gate capacitance, making it well-suited for use in high-performance RF circuits.

The device is highly reliable and has several safety features. It can be used to protect circuits from voltage fluctuations, and it is capable of withstanding harsh environmental conditions.

In conclusion, the MHT1001HR5 is an excellent choice for RF applications. It offers superior linearity, a wide voltage range, and an impressive maximum frequency, making it an ideal candidate for high-performance designs.

The specific data is subject to PDF, and the above content is for reference

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