MHT1008NT1

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The MHT1008NT1 is a silicon N-channel MOSFET of the “High Performance” line. This device is suitable for applications that require high Ciss and high output power. The MHT1008NT1 offers excellent performance in medium to high frequency applications.

Features

• Excellent Ciss
• High output power
• Low off-state current
• Low capacitance
• High drain-source voltage

Applications

The MHT1008NT1 is ideal for a variety of applications, including:

• RF amplifiers, oscillators, and mixers
• Switch networks
• High power linear amplifiers
• High power switching circuits

Working Principle

The MHT1008NT1 is a N-channel MOSFET that primarily operates in the enhancement mode and works using the principles of capacitance, gate resistance and channel mobility. The channel mobility is a measure of how easily electrons can flow through the MOSFET. The gate resistance is a measure of the resistance to current flow between the gate and the source. The capacitance is a measure of how much current can be stored on the gate.

In operation, when a positive voltage is applied to the gate relative to the source, a layer of electrons forms around the gate. This is known as an inversion layer, and it creates a conductive channel between the source and drain. This channel is controlled by the voltage on the gate, so by controlling the gate voltage, the current between the source and drain can be controlled.

The MHT1008NT1 is well suited for RF applications because of its low capacitance, low off-state current, and high drain-source voltage. These features make it ideal for high power linear amplifiers, switch networks, and other high power switching circuits.

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