MHT1004GNR3

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The MHT1004GNR3 is a FET low-noise transistor device developed by Global Microelectronics, Inc. It is an enhancement-type, N-channel, RF MOSFET. This device is typically used as an amplifier in RF applications and has a frequency range of up to 40 GHz. The MHT1004GNR3 is designed to provide excellent performance characteristics, such as low noise figure, high gain, and low-frequency noise characteristics.

The key feature of the MHT1004GNR3 is its low-noise figure. The noise figure is measured and expressed as the ratio of the output noise power of a transistor device to the input noise power received from the reference source. Low-noise figure and high gain are important parameters in the design of RF amplifiers. The MHT1004GNR3 has a 2 dB noise figure and 21 dB of gain which makes it suitable for a wide range of RF applications.

The working principle of the MHT1004GNR3 transistor device is quite simple. This device operates on a basic principle of majority carrier injection. This is a method of conduction in which a majority charge carrier, e.g. electrons, injects into the channel of the transistor. This results in the current flow through the device being controlled by the applied voltage. The relationship between voltage and current is the transconductance, the ratio of the output current to the input voltage. The MHT1004GNR3 has a typical transconductance of 20 mS, with a gate-source voltage of -1V.

The MHT1004GNR3 device has a wide range of practical applications. It is used to amplify small signals in radio frequency applications such as low-noise amplifiers, radio receivers, and satellite systems. It is also used as a driver for high-power amplifiers in various communications systems. Additionally, this device is well-suited for use with very high-frequency RF switches and mixers.

In conclusion, the MHT1004GNR3 is a type of low-noise, high-gain transistor device used in a variety of radio frequency applications. It has a low-noise figure and is designed to provide excellent performance characteristics such as high gain and low-frequency noise. This device operates on a majority carrier injection principle, with a typical transconductance of 20 mS. The wide range of applications of the MHT1004GNR3 make it an attractive option for both commercial and military communications.

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