MHT1004NR3

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The MHT1004NR3 is an RF MOSFET specifically designed for general purpose RF power/driver amplifier applications. The device is available in two package types, metal TO-22 and metal flange SOT-223, and has a maximum power rating of 200W. With its high power and high gain, this MOSFET provides high power efficiency and can be used in a wide number of RF applications.

MHT1004NR3 Application Field

The MHT1004NR3 is particularly suitable for high-power amplifier applications in the 900-1000MHz frequency range such as cell phone repeaters and infrastructure, as well as cable television broadcast amplifiers, remote network access points, broadcast video and telemetry applications. The MHT1004NR3 also has excellent noise performance, making it well-suited for high-power, high-efficiency applications such as EDGE handsets, point-to-point radio and satellite communication.

MHT1004NR3 Working Principle

The MHT1004NR3 is a MOSFET device and operates by amplifying the input signal through a drain-to-source field-effect conductance. The voltage at the gate controls the amount of current that can flow through the channel between the source and drain and therefore the output power. The MHT1004NR3 is designed to dissipate up to 200W of power and its high feedback voltage enables the MOSFET to operate at high frequencies, while its low RDSon ensures low drain-source leakage in the device.

To drive the MOSFET device, an external amplifier such as an amplifier IC or transistor is needed. The amplifier IC or transistor takes in a low power signal and amplifies it so that it can drive the MOSFET. The gain of the amplifier is determined by the magnitude of input signal and the output power. The MOSFET can be driven with DC or AC, depending on the type of AC or DC signal desired from the final amplifier circuit. By relying on the Mosfet’s raw power, a relatively small amplifier can produce a very strong output signal.

The MHT1004NR3 has an extremely wide operating temperature range from -55°C to +150°C, making it an ideal device for high temperature and high power applications such as RFI and EMI applications. This device also features an enhanced ESD threshold voltage of 10 volts, allowing it to withstand higher electrostatic discharges. Additionally, the MHT1004NR3 has a wide bandwidth of up to 500MHz with a very low alpha (noise) rate.

The MHT1004NR3 is designed to provide high efficiency and power output in a wide variety of RF applications including remote networks, broadcast video, cellular repeaters and infrastructure, as well as cable television broadcast amplifiers. Its superior noise performance, wide bandwidth and extended temperature range make it a highly suitable choice for RF power amplification applications. This MOSFET is available in both the TO-22 and SOT-223 packages and offers excellent performance at an attractive price point.

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