Allicdata Part #: | MJW21191G-ND |
Manufacturer Part#: |
MJW21191G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 150V 8A TO-247 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 8A 4MHz 125W Thr... |
DataSheet: | MJW21191G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 1.6A, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 4A, 2V |
Power - Max: | 125W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The MJW21191G is a single complementary PNP and NPN transistor made with bipolar (BJT) technology. It’s designed for medium power, custom discrete circuits applications in the medium frequency range. The maximum rating is 1000V. This transistor consists of NPN and PNP epitaxial planar transistors with separate emitters, with no internal connection between them. The schematic symbol for an NPN transistor is shown in the figure below.
In simplified terms, a BJT (Bipolar Junction Transistor) is a solid-state device that uses the flow of electrons and holes between two regions of a semiconductor to control the current in a given circuit. When current is applied to one of the two regions, the other region experiences a change in the amount of current flowing through it. This change affects the voltage drop across the two regions and allows the transistor to act as a switch or amplifier.
An NPN transistor is typically composed of a semiconductor materials such as silicon. When current is applied to the Base (B) of the transistor, the electrons from the Base region are attracted to the Emitter (E), which also carries a current. The electrons from the Emitter then collide with the holes in the Collector region, thereby creating the potential for a small current to flow between the E and C regions. This current, or gain, is modulated by changing the current applied to the Base. As a result, the NPN transistor can act as a switch or an amplifier.
In addition to its role as a switch, an NPN transistor can also be used to amplify a signal. The small current between the Base and Emitter is amplified as it flows through the Collector region, creating a much larger amplified signal. This amplified signal can then be applied to various applications such as a speaker or a motor.
The MJW21191G is available in a variety of packages, including the through-hole TO-220 and surface-mounted SOT-223 packages. It has a maximum collector current of 0.8 A, making it ideal for medium frequency, high-power circuit applications. The MJW21191G is also designed to handle large voltages and can withstand voltages up to 1000 V.
The MJW21191G is an ideal choice for custom discrete circuits and is suitable for a variety of applications, including audio amplifiers, motor control, and power switching. It offers a reliable and efficient performance in a wide range of medium frequency circuit designs.
The specific data is subject to PDF, and the above content is for reference
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