MJW21192G

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MJW21192G is a single bipolar junction transistor (BJT) device manufactured by ON Semiconductor. The MJW21192G is commonly used in power switching applications such as DC-DC converters, as well as amplifier and high-power general switch circuits.

This device is a plastic material-encapsulated PNP BJT transistor, with ON Semiconductor’s proprietary Darlington technology at its core. In essence, a Darlington transistor is two NPN transistors connected in series which both act as current amplifiers and allow the flow of current from the collector to the emitter. This greatly increases the output current that can be handled by a single BJT, enabling more powerful and efficient applications.

The MJW21192G features an NPN base, PNP emitter, and collector and is capable of operating at collector-emitter voltages of up to 400V. The power dissipation of the MJW21192G is 8.0W at a junction temperature of 25°C and a case temperature of 85°C. The on-state resistance of the device is also very low, at 8.2Ω. This low resistance allows the transistor to be used in high-current applications, such as power supplies and DC-DC converters.

The working principle of the MJW21192G is based on the idea of a BJT transistor. A BJT transistor is a type of device which relies on the movement of electrons from the base to the collector in order to turn on or off the flow of current. When the base terminal is forward biased, electrons flow from the emitter to the collector, allowing current to flow from the collector to the emitter. When the base terminal is reverse biased, no electrons are able to flow and the transistor is turned off.

The MJW21192G device is an excellent choice for applications which require a high collector-emitter voltage and high current handling capabilities. The low on-state resistance of the device allows it to be used in a variety of power switching applications. Furthermore, the Darlington technology employed by the device ensures high reliability while allowing current amplification and allowing the transistor to be suitable for high-power applications.

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