MJW21193G

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The MJW21193G is an NPN Silicon Power Bipolar Transistor, which uses an isolated Emitter, Common Base configuration. It is designed for general-purpose switching and amplifier applications up to 65V power supply, making it excellent for applications such as industrial control, railway signal and or amplifiers.

The maximum collector current rating, Ic, of the MJW21193G is 26A, with a Collector Cut-Off Current of Icbo being equal to 1mA. Maximum Collector-Emitter Voltage of the MJW21193G is VCEO, which is equal to 65V. They also have a max Collector-Base Voltage, Vcb, of 80V and a Lead temperature of 260°C.

The MJW21193G has a static Base-Emitter saturation voltage, Vceo, of 2V and a Collector-Base capacitance of 60pF. The Collector-Emitter capacitance is equal to 55pF, with a Collector-Emitter saturation voltage, Vceo, of 1.3V. The Transistor has a High frequency Current Gain, hfe, being equal to 270.

These parameters and ratings of the MJW21193G allow for a wide range of applications, making it ideal for use in industrial control, railway signal and amplifier systems. This is due to the high current rating, and due to its rating of Collector-Emitter voltage, Vceo, the MJW21193G can be used in high voltage applications. The low saturation voltage allows the MJW21193G transistor to be used in a wide range of amplifier systems, as well as in general-purpose switching circuits.

The operating principle of the MJW21193G is based on a technique known as Forward Breakdown. In this technique, the device functions as an amplifier, where the voltage difference between the Emitter and the Base of the transistor is amplified, which is then applied to the Collector. This allows the transistor to amplify the input voltage from the Emitter, and switch it to the Collector in a very efficient manner.

The MJW21193G is also very efficient in terms of power consumption, making it ideal for use in applications where power is limited. It also has a very low thermal resistance, making it excellent for use in high temperature applications. Additionally, the MJW21193G also has a very high breakdown voltage, making it suitable for use in high voltage applications.

To conclude, the MJW21193G is an ideal transistor for a wide range of applications. It has a high current rating, low saturation voltage, and a high breakdown voltage, making it excellent for use in a wide array of applications, such as industrial control, railway signal, and amplifier systems. In addition, the low thermal resistance of the MJW21193G makes it ideal for use in high temperature applications, further increasing its utility.

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