MJW21195

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	250V
Vce Saturation (Max) @ Ib, Ic:	3V @ 3.2A, 16A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 8A, 5V
Power - Max:	200W
Frequency - Transition:	4MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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Transistors - Bipolar (BJT) - Single

The MJW21195 is a single bipolar junction transistor (BJT) that is designed and manufactured specifically for audio power amplifier applications. The device features a high breakdown voltage, low on-state resistance, and low thermal resistance, making it ideal for use in power amplifier applications.The MJW21195 is a three-terminal device consisting of an emitter, base, and collector. The emitter is connected to the power source, and the collector is connected to the load. The current flow between the emitter and collector is controlled by the base-emitter junction. When a voltage is applied to the base-emitter junction, electrons are attracted to the base-emitter junction and will flow from the base to the emitter. The resulting current flow from the emitter to the collector is known as the collector current. The magnitude of the collector current can be controlled by adjusting the voltage applied to the base-emitter junction.The MJW21195 has a number of advantages over other types of transistors. The device has a higher breakdown voltage than other devices, making it suitable for use in applications with high voltages. Additionally, the device has a low thermal resistance, which improves overall efficiency in power amplifiers. The device also has a low on-state resistance, resulting in lower power dissipation and higher efficiency. The working principle of the MJW21195 is based on the base-emitter junction. A voltage is applied to the base-emitter junction, causing electrons to be attracted to the base-emitter junction. The resulting current flow from the emitter to the collector is known as the collector current, and this current is controlled by the voltage applied to the base-emitter junction. The greater the voltage applied to the base-emitter junction, the greater the collector current. The MJW21195 has a variety of applications. It can be used in audio amplifiers, power amplifiers, and audio preamps. It is also used in the design of power supplies, DC to DC converters, and RF amplifiers. The device can also be used in AC-DC inverters and variable voltage power supplies. The device has also been used in radio frequency (RF) amplifiers and antenna applications. The MJW21195 is a versatile and reliable device that is suitable for a wide range of applications. It has a high breakdown voltage and low on-state resistance, making it ideal for power amplifier applications. It also has a low thermal resistance, allowing for improved efficiency in audio amplifiers. Additionally, the device is relatively easy to use and is compatible with a wide range of components. Overall, the MJW21195 is a useful and reliable single bipolar junction transistor (BJT) device. It is designed specifically for audio power amplifiers and is suitable for a wide range of applications. It has a high breakdown voltage, low on-state resistance, and low thermal resistance, making it an ideal choice for audio amplification applications. Additionally, the device is relatively easy to use and is compatible with a wide range of components.

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