MJW21195G Allicdata Electronics
Allicdata Part #:

MJW21195GOS-ND

Manufacturer Part#:

MJW21195G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 250V 16A TO247
More Detail: Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Th...
DataSheet: MJW21195G datasheetMJW21195G Datasheet/PDF
Quantity: 92
Stock 92Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
Power - Max: 200W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The MJW21195G is a bipolar Junction Transistor (BJT) to which two internal transistors are connected to form a single spilt structure. It is a convenient device for its ability to directly drive and control high current loads with a single pin, making it ideal for applications such as power amplifiers and power switches. Furthermore, it has a low saturation voltage, making it suitable for low-voltage applications.

The MJW21195G is a NPN type BJT, with a maximum voltage of 200 Volts and a maximum current of 5 Amperes. The device consists of two collector electrodes, each of which is electrically isolated from the other, and a single emitter electrode connected by a single base terminal. As a result, the collector-base bias condition of each of the internal transistors can be independently determined and optimized, which in turn enables the device to have good gain and power transistors which are well matched. Additionally, the isolation between the collector section and the emitter section prevents cross-over conduction, the biggest cause of failure in power transistors.

The MJW21195G works mainly on the principle of N-type and P-type dopant movement, facilitated by electron and hole transport. This movement of electrons and holes creates negatively charged and positively charged semiconductor regions which are electrically connected to each other through the base contact. When an external signal current is applied to the base, it results in the flow of electrons from the emitter to the collector, and the holes from the collector to the emitter, resulting in a larger current between the collector and the emitter. This process is known as forward biasing. When the base voltage is reversed, the current between the collector and the emitter is blocked, and this phenomenon is known as reverse biasing.

The MJW21195G is used in a variety of electronic applications, including radio-frequency amplifiers, switching power amplifiers, power supply regulators, and transistor switch circuits. It is also used in robotic applications as a motor control, and in computer networks as a switching device. It is also used in power switch networks to control the flow of current, and in the manufacture of high-end audio systems.

The MJW21195G is also a popular choice for use in circuits with DC loads because of its low saturation voltage and high current-gain ratio. Additionally, the MJW21195G has high switching speed, which makes it suitable for high-speed signal transmitters. In conclusion, the MJW21195G is a versatile and reliable device for use in a wide range of electronics and power applications.

The specific data is subject to PDF, and the above content is for reference

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