MJW21196 Allicdata Electronics
Allicdata Part #:

MJW21196OS-ND

Manufacturer Part#:

MJW21196

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 16A TO247
More Detail: Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Th...
DataSheet: MJW21196 datasheetMJW21196 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
Power - Max: 200W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The MJW21196 is a single-discrete bipolar transistor that is extremely popular due to its performance and low cost. It is primarily used for audio applications, but can also be used for DC/DC converters, motor control and power semiconductors. It can handle up to 200V in its collector-emitter voltage, and is capable of handling up to 55A in its collector current.

The MJW21196 features a low collector-emitter saturation voltage of 0.6V and a high DC current gain of 800A/A – making it ideal for audio amplifiers, power switches and linear actuators. It also has a high junction temperature rating of 125°C, which allows operation in a wide variety of harsh environments.

The MJW21196 has a simple working principle. It is composed of two transistors in a single package that operates as a switch. When the base terminal is biased at currents of between 1 to 4mA, the collector-emitter voltage is lowered and the device is turned “on”. When the base current is lowered, the device is turned “off”, resulting in zero current going through the collector-emitter junction.

The MJW21196 is available in multiple packages, such as TO-220, TO-3 and DPAK. In addition, it has a wide range of maximum collector-emitter voltage ratings, from 15V to 200V. As a result, it is highly suitable for automotive applications as well as industrial and consumer markets.

The MJW21196 also exhibits excellent heat resistance. The thermal resistance (θJC) of the device is as low as 4.56°C/W, meaning that it is capable of dissipating heat quickly and efficiently. This makes it suitable for applications that require reliable and consistent performance under difficult conditions.

The MJW21196 is an ideal choice for applications that require robust performance in the presence of high collector-emitter voltages and high collector-emitter currents. It has a wide power range and can handle up to 200V in its collector-emitter voltage and 55A in its collector current. In addition, it features a low saturation voltage, high DC current gain and excellent heat resistance. Due to its combination of features, the MJW21196 is one of the most popular single bipolar transistors available on the market.

The specific data is subject to PDF, and the above content is for reference

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