| Allicdata Part #: | MJW21196GOS-ND |
| Manufacturer Part#: |
MJW21196G |
| Price: | $ 2.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 250V 16A TO247 |
| More Detail: | Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Th... |
| DataSheet: |  MJW21196G Datasheet/PDF |
| Quantity: | 189 |
| 1 +: | $ 2.62710 |
| 10 +: | $ 2.36187 |
| 100 +: | $ 1.93492 |
| 500 +: | $ 1.64714 |
| 1000 +: | $ 1.38915 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 16A |
| Voltage - Collector Emitter Breakdown (Max): | 250V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 3.2A, 16A |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 8A, 5V |
| Power - Max: | 200W |
| Frequency - Transition: | 4MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
Description
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The MJW21196G is a bipolar junction transistor (BJT) which is single in nature. It is widely used in the electronics industry due to its wide range of application fields and its reliable performance.
The MJW21196G has three main sections: the base, the collector and the emitter. These three parts are responsible for carrying out the operations which are essential for its functioning.
At the base section, the current is allowed to move into the device when electrons from the emitter region are pushed onto the base by the battery. This is called base current or current flow. As electrons are added, the resistance of the base becomes lower allowing more current to flow.
At the collector section, the current that was initially taken in by the base section is then used to produce a new current by means of the collector\'s electrons being attracted by the battery. This is known as the collector current.
At the emitter section, the electrons that move between the base and collector regions are collected in the emitter section. It then emits some of these electrons back into the base region. This created a flow of electrons in the opposite direction, which is then known as the emitter current.
The working principle of the MJW21196G is based on the fact that electrons from its emitter region are pushed onto the base by a battery and the collector collects these electrons and emits them back in the opposite direction. In this way, the current flow is established which is necessary for the proper functioning of the transistor.
As the current flow is established, the MJW21196G can be used in a wide range of application fields such as transistors, amplifiers, switches, converters, logic circuits, and many more. Some of the most common applications of the MJW21196G include switching, amplifying, and mirroring signals.
Due its easy availability, reliable performance, and wide range of application fields, the MJW21196G is a popular choice for both beginners and professionals when building or repairing devices.
In conclusion, the MJW21196G is a single bipolar junction transistor (BJT) that is used in a variety of application fields and has a reliable performance. Its emitter, collector, and base sections are responsible for its functioning and the working principle is based on the current flow established between the three parts. Due to its wide range of applications and easy availability, it is popular choice among consumers and professionals when building or repairing devices.
The specific data is subject to PDF, and the above content is for reference
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