Allicdata Part #: | MMDF2N02ER2OS-ND |
Manufacturer Part#: |
MMDF2N02ER2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 25V 3.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 3.6A 2W Surfac... |
DataSheet: | MMDF2N02ER2 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 532pF @ 16V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Series: | -- |
Description
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MMDF2N02ER2 is a very versatile and common transistor array used in many different applications. It is a type of FET (Field Effect Transistor) array, manufactured for low-power applications and is intended for use as an analog switch. It is usually provided in a 10-pin package and is part of the MMDF family. The internal structure of the MMDF2N02ER2 comprises of two individually addressable FETs, while each FET features source, gate and drain pins.
Applications
The MMDF2N02ER2 is mainly employed in low-power and analog switching applications, where it is connected between two points, opening and closing the connection according to a predetermined voltage. The MMDF2N02ER2 transistors are specifically used in low current and low voltage analog circuits and can be used in multiplexers, synchronizers, analog switches and DC amplifiers. Furthermore, they are used in devices such as audio amplifiers, current mirrors, and choppers, as well as industrial and automotive applications.Working Principle
The MMDF2N02ER2 transistors are designed to be operated by applying the appropriate voltage on the gate contact. The current flowing through both FETs ranges from 0 to 5A. The current through the FETs is regulated by adjusting the gate voltage by the signal of a control system that is connected to the drain and source of the MMDF2N02ER2.When the signal for the control system is applied to the gate of the transistor array, the current through the transistor array changes according to the applied voltage. If a positive voltage is applied to the gate, then the voltage between the source and the drain will increase, and thus the current will increase. On the other hand, if a negative voltage is applied to the gate, then the voltage between the source and the drain will decrease and the current will decrease.The MMDF2N02ER2 exhibits resistance in the range of 10 to 20000 ohms when connected to power supplies. The resistance is dependent on the voltage being applied, and can be adjusted by controlling the amount of current being supplied to the gate of the transistor array.Conclusion
In conclusion, the MMDF2N02ER2 is a versatile and common type of FET array used in many different applications. It is employed in low-power and analog switching applications, and is particularly well-suited for use in multiplexers, synchronizers, analog switches and DC amplifiers. It can also be used in audio amplifiers, current mirrors and choppers, as well as industrial and automotive applications. It is designed to be operated by applying the appropriate voltage on the gate contact, and offers resistance values in the range of 10 to 20000 ohms depending on the voltages applied.The specific data is subject to PDF, and the above content is for reference
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