MMDF3N02HDR2G

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​The MMDF3N02HDR2G is a FET manufactured by NXP Semiconductors. This device is a single Enhancement mode, high-speed power MOSFET. It is designed to provide high current and fast switching speed while operating at low input voltages.

Features and Benefits

The MMDF3N02HDR2G offers some benefits to its end applications. These are:-

• Low on-resistance across the operating voltage range
• High breakdown voltage and latest process technologies which enable high current handling capability
• Low gate charge for fast switching with low input capacitance
• No secondary breakdown
• ESD protection up to ± 8kV HBM
• Small footprints

General Specifications

• Power Dissipation: 1.5W
• Drain-Source Voltage (VDS) max: 20V
• Gate-Source Voltage : ±20V
• Continuous Drain Current: 3A
• Maximum Drain Current: 5A
• Drain-Source On Resistance: 33mΩ
• Power MOSFET Package Type: SOT-223
• Mounting Style: SMD

Applications

The MMDF3N02HDR2G is a commonly used device for applications such as:-

• Mobile phone chargers
• Battery Charger
• DC/DC converters
• Motor Controllers
• Switched Mode Power Supplies
• Solid State Relays

Working Principle

The MMDF3N02HDR2G operates using the principle of enhancement-mode MOSFET. It has a gate voltage that controls the amount of current flowing between the source and the drain. When the gate voltage is applied below the threshold voltage, the MOSFET turns off and no current flows. When the gate voltage is applied above the threshold voltage, the MOSFET turns on and current can flow. The amount of current flowing between the source and the drain is controlled by the gate voltage.

The MMDF3N02HDR2G is a P-type MOSFET, meaning that when the gate voltage is applied above the threshold voltage, majority carriers, in this case holes, are attracted to the gate and current flows from the drain to the source. When the gate voltage is applied below the threshold, the majority carriers are repelled away from the gate and no current flows.

The MMDF3N02HDR2G is also capable of handling higher currents with lower on-resistance, which reduces switching time with increased efficiency. This makes it perfect for applications like mobile phone chargers, battery chargers, DC/DC converters, motor controllers, switched mode power supplies and solid state relays.

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