MMDF3N02HDR2 Allicdata Electronics
Allicdata Part #:

MMDF3N02HDR2-ND

Manufacturer Part#:

MMDF3N02HDR2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 3.8A 8-SOIC
More Detail: P-Channel 20V 3.8A (Ta) 2W (Ta) Surface Mount 8-SO...
DataSheet: MMDF3N02HDR2 datasheetMMDF3N02HDR2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MMDF3N02HDR2 Application Field and Working Principle

The MMDF3N02HDR2 is a part of a type of transistor known as a Field Effect Transistor (FET). FETs are a type of transistor that controls the flow of electric current throughout a circuit by using a small gate voltage. The gate voltage is the small amount of current used to control the flow of electric current in the circuit. They are semiconductor devices that can be used to switch between two or more electrical states. The MMDF3N02HDR2 is a specific type of FET, known as a metal-oxide-semiconductor field-effect transistor (MOSFET).

A MOSFET can be used to regulate the amount of current that passes through a circuit. It works by using an insulated gate that is connected to the electric current. When a voltage is applied to the gate, it changes the transistor\'s conductivity, allowing the current to flow. The electric current is then regulated by the gate voltage. This makes it possible to control the most precise amount of current that passes through a circuit. It is also used to control the direction in which the current flows. This makes it very useful in a variety of applications, such as power regulation, switching, and amplifying.

In particular, the MMDF3N02HDR2 is a single N-channel MOSFET that is commonly used for power supply regulation and switching applications. It is specifically designed to deliver high efficiency and a wide range of performance in its applications. The device is available in a TO-255 package, which makes it easy to mount and fit into a variety of circuits. The MMDF3N02HDR2 features a drain-source breakdown voltage of 100V, a drain-source current rating of 15A, and an on-resistance of 3.2 Ohms. The device is also rated to handle peak currents up to 35A.

The MMDF3N02HDR2 MOSFET is typically used for power applications such as motor control, inverters, and switching power supplies. The device is capable of switching rapidly and with minimal losses, making it ideal for high-efficiency applications. The device can also be used for amplifier circuits and audio applications such as subwoofers and headphone amplifiers. Additionally, the MOSFET can be used for switching applications such as controlling LCDs and LEDs.

The MMDF3N02HDR2 is well suited for both analog and digital applications. In analog applications, it can be used to regulate both AC and DC currents, allowing for precise power regulation with minimal losses. In digital applications, the high on-resistance and fast switching speed of the MOSFET makes it ideal for controlling digital signals in a variety of circuits.

Overall, the MMDF3N02HDR2 is a reliable and versatile power FET. With its high current and voltage ratings, fast switching speeds, and low on-resistance, it is an ideal choice for a range of power supply, switching, and amplifier applications. Additionally, the device’s reliable performance makes it well suited for both analog and digital applications, making it a great all-round choice for a variety of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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