MMDF2P02ER2G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	2.5A
Rds On (Max) @ Id, Vgs:	250 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	475pF @ 16V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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MMDF2P02ER2G Application Field and Working PrincipleTransistors and field effect transistors (FETs) are among the most common electrical components used in modern devices ranging from computers and TVs to industrial automation systems. One of the main reasons for the widespread use of transistors and FETs is their low power consumption and the ability to work at low voltage levels. In this article, we will discuss the application field and working principle of MMDF2P02ER2G, a type of vertical DMOS FET array.MMDF2P02ER2G is a vertical DMOS FET array with low on-state resistance, high density, and low power consumption. It has four independent FETs that are arranged in a 2-in-1 package to lower the overall power consumption in a system. The device is designed for use in switching, protection, and appending circuits, and can operate at voltages up to 100V.The working principle of MMDF2P02ER2G is based on the transfer of an electric charge between two different conductors, or gates, that are connected through an insulator. When a voltage is applied to one gate, a corresponding electric field is created and the electric field will cause a transfer of electric charges from one gate to the other. In this way, the MMDF2P02ER2G can be used to switch and protect various electronic devices.One of the main advantages of MMDF2P02ER2G is its low on-state resistance, which allows it to be used in high voltage circuits. It has an on-state resistance of just 0.2Ω and a breakdown voltage of up to 100V, which is much higher than other FETs. This makes it ideal for use in switching and protection circuits in industrial automation systems.The other advantage of the MMDF2P02ER2G is its high density, which makes it suitable for use in small and densely populated circuits. Its four FETs are combined into a single 2-in-1 package and connected with a common drain. This allows for a more efficient use of available space and reduces overall power consumption.The MMDF2P02ER2G is also designed for improved thermal performance, which increases its reliability and durability. The device has an optimized internal structure to ensure a minimum thermal resistance and maximum heat transfer efficiency. This allows it to operate reliably even in high temperature environments.In conclusion, the MMDF2P02ER2G is an ideal device for a wide range of applications such as switching and protection circuits in industrial automation systems. Its low on-state resistance, high density, and excellent thermal performance make it well-suited for use in these applications. Furthermore, its 2-in-1 package design reduces overall power consumption and saves on space.

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