MMDFS6N303R2 Allicdata Electronics
Allicdata Part #:

MMDFS6N303R2OS-ND

Manufacturer Part#:

MMDFS6N303R2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 6A 8-SOIC
More Detail: N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC
DataSheet: MMDFS6N303R2 datasheetMMDFS6N303R2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 24V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31.4nC @ 10V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The MMDFS6N303R2 is a low-cost, silicon, N–Channel, enhancement-mode, insulated-gate, field-effect transistor device, specifically designed for use in output stages and alternative drivers of remote sensing broadband amplifiers.

The device is further qualified for a wide range of power control applications such as brushed motor, DC-DC converters, solenoids, relays, lamps and LED drivers when used in appropriate circuits and systems.

The MMDFS6N303R2 combines a highly reliable, silicon N–channel insulated-gate field-effect transistor design with front-end isolation technology to deliver enhanced performance and reduction in radiation fields compared to other available devices, with no degradation in reliability.

This device is ideal for applications that require low gate capacitance, high switching speed and a low output capacitance. Its key features include low input capacitance, low gate charge, low gate resistance, fast switching times, and low drain–source on resistance.

The MMDFS6N303R2 features an insulated gate field effect technology with excellent temperature and voltage stability, making it suitable for a wide range of applications.

Working Principle

In the most basic sense, field-effect transistors operate by using a voltage applied to the gate to control the flow of current through the drain and source terminals. With a positive voltage applied to the gate, electrons are attracted to the surface of the gate, allowing current to flow between the drain and source terminals. Conversely, a negative voltage will push the electrons away from the gate surface, reducing the current flow. The magnitude of the voltage applied to the gate determines the level of current flow.

The MMDFS6N303R2 has a low gate capacitance and a low output capacitance, allowing it to switch at high speeds. It also has a low gate charge and low gate resistance, helping to reduce power consumption during switching. Additionally, it has a very low on-resistance, allowing it to regulate the flow of current more accurately. These features make it ideal for applications that require high switching speeds and low power consumption.

Application Field

The MMDFS6N303R2 is suitable for a wide range of applications in the industrial, automotive and consumer markets. In the industrial segment, it is used in brushed motor controllers, DC-DC converters, relays, solenoids, lamps and LED drivers. In the automotive market it is used for braking systems, fuel systems, cooling fans and infotainment systems. In the consumer segment, it is used in digital cameras, laptop computers, mobile phones and other portable devices.

It is also suitable for applications such as power control circuits, power supplies and motor controls, where switching speed and low power consumption are required. It is also used in low-noise circuits, where its low gate capacitance and fast switching times help to provide clean power outputs.

The MMDFS6N303R2 is a robust, reliable device that is ideal for a wide range of power control applications. Its features make it a good choice for applications that need fast switching times and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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