Allicdata Part #: | MMDF3N04HDR2OSCT-ND |
Manufacturer Part#: |
MMDF3N04HDR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 40V 3.4A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 3.4A 1.39W Sur... |
DataSheet: | MMDF3N04HDR2 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | MMDF3N04HD |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.39W |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 32V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
Description
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MMDF3N04HDR2 Application Field and Working Principle
Introduction
MMDF3N04HDR2 is an analog four-channel MOSFET array designed by ROHM Semiconductor. It is a low-on resistance device that can switch low voltages and is suitable for a wide range of applications in which a power supply is operated. This device is well suited for the protection of device circuits against damage caused by excessive voltage, such as microcomputer systems, power supply systems, inverters, and so on. In addition, this device can also be used in other applications that require a low on-resistance, such as current limiters, driver circuits, etc.
Application field
MMDF3N04HDR2 primarily has been developed for applications which include current limiters, voltage limiters, load switches and power supply control. Due to its low on-resistance, this device is ideally suited for current limiting applications such as surge, shock and EMI filter circuit protection. It is also useful for voltage limitation applications as it can precisely limit the voltage by using its low on-resistance. Furthermore, this device can be widely utilized in load switch circuits, Motor Driver and power supply control, which require a low on-resistance.
Working Principle
The MMDF3N04HDR2 is a four-channel, N-Channel MOSFET array that is intended for use in a wide range of applications that require a low on-resistance. This device is available in an array of packages, which makes it very versatile. It is controlled by an external bias, which consists of a gate driver. A positive voltage applied to the gate of the MOSFET will conduct current while a negative voltage to the gate will shut off the current.
The device has two gate inputs and two gate outputs. The gate input is the signal that drives the gate of the MOSFET, causing it to conduct. The gate output is a diode-clamped signal that is used to control the gate of four parallel MOSFETs. When the voltage at the gate input is high, it turns on the MOSFETs to conduct the current. When the voltage at the gate input is low, the MOSFETs are off.
The MMDF3N04HDR2 has an externally adjustable current limit. Once the current limit is set, any current exceeding this limit will be clamped. The device can also be used for ESD protection, as it has a built in diode that will protect the MOSFET from the effects of ESD.
Conclusion
The MMDF3N04HDR2 is an ideal device for low on-resistance applications. It is a four-channel MOSFET array that can be used in a variety of applications. It is designed to be used in current limiters, voltage limiters, load switches, and power supply control. It features externally adjustable current limit, which makes it an ideal choice for applications that may be exposed to high current demand. Lastly, this device is also highly resistant to the effects of ESD, ensuring its protection and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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