MMSF3P02HDR2 Allicdata Electronics
Allicdata Part #:

MMSF3P02HDR2OSTR-ND

Manufacturer Part#:

MMSF3P02HDR2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 5.6A 8-SOIC
More Detail: P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: MMSF3P02HDR2 datasheetMMSF3P02HDR2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MMSF3P02HDR2 is one of the higher power MOSFETs on the market, it has a wide range of applications from RF, audio and video, power supplies and more. MOSFETs are capable of switching currents with very low loss, making them ideal for use in high-power applications such as motor control, power management, and power conversion.

The MMSF3P02HDR2 is a single-stage n-channel HEXFET MOSFET with a typical drain-source breakdown voltage of 75V and a continuous drain-source current at 100°C of 3A. It offers a high power density, while its low gate charge and low on-resistance allows for efficient switching and low power dissipation. The MMSF3P02HDR2 also offers a low gate-threshold voltage, making it suitable for applications requiring very low voltage control.

The MMSF3P02HDR2 is typically used in applications that require a high switching frequency, such as switching power supplies, motor controllers, and DC-DC converters. It can also be used in high voltage or high current applications. It has a thermal resistance junction to case (Rjc) of 4.7 °C/W and a maximum junction temperature of 175°C. The MMSF3P02HDR2 has a maximum operating temperature of 175°C and a package resistance to heat of 0.3. It has a high thermal stability and is RoHS compliant.

The MMSF3P02HDR2 works on the principle of metal-oxide-semiconductor field-effect transistors (MOSFETs). It is a type of transistor that can act as a switch when DC is applied across its pins. The device contains a gate which is controlled by a voltage inserted across the two terminals of the device (drain-gate and source-gate). When a positive voltage is applied to the gate, a conductive path (channel) is formed between the source and the drain.

When the gate is opened or when a negative voltage is applied, the channel is blocked and current will not flow. This makes MOSFETs ideal for use as switches in circuits that require digital signals or low- and high-power switching. The MMSF3P02HDR2 is also used in integrated circuits and in power amplifiers for RF and audio applications.

The MMSF3P02HDR2 is a robust and reliable device, it is designed to operate efficiently in high-power applications and is extremely energy-efficient. It is a low-cost solution for motor control, power management, and power conversion applications. It is also RoHS compliant and is an excellent choice for today\'s high-efficiency designs.

The specific data is subject to PDF, and the above content is for reference

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