Allicdata Part #: | MMSF3P02HDR2OSTR-ND |
Manufacturer Part#: |
MMSF3P02HDR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 5.6A 8-SOIC |
More Detail: | P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | MMSF3P02HDR2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 16V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MMSF3P02HDR2 is one of the higher power MOSFETs on the market, it has a wide range of applications from RF, audio and video, power supplies and more. MOSFETs are capable of switching currents with very low loss, making them ideal for use in high-power applications such as motor control, power management, and power conversion.
The MMSF3P02HDR2 is a single-stage n-channel HEXFET MOSFET with a typical drain-source breakdown voltage of 75V and a continuous drain-source current at 100°C of 3A. It offers a high power density, while its low gate charge and low on-resistance allows for efficient switching and low power dissipation. The MMSF3P02HDR2 also offers a low gate-threshold voltage, making it suitable for applications requiring very low voltage control.
The MMSF3P02HDR2 is typically used in applications that require a high switching frequency, such as switching power supplies, motor controllers, and DC-DC converters. It can also be used in high voltage or high current applications. It has a thermal resistance junction to case (Rjc) of 4.7 °C/W and a maximum junction temperature of 175°C. The MMSF3P02HDR2 has a maximum operating temperature of 175°C and a package resistance to heat of 0.3. It has a high thermal stability and is RoHS compliant.
The MMSF3P02HDR2 works on the principle of metal-oxide-semiconductor field-effect transistors (MOSFETs). It is a type of transistor that can act as a switch when DC is applied across its pins. The device contains a gate which is controlled by a voltage inserted across the two terminals of the device (drain-gate and source-gate). When a positive voltage is applied to the gate, a conductive path (channel) is formed between the source and the drain.
When the gate is opened or when a negative voltage is applied, the channel is blocked and current will not flow. This makes MOSFETs ideal for use as switches in circuits that require digital signals or low- and high-power switching. The MMSF3P02HDR2 is also used in integrated circuits and in power amplifiers for RF and audio applications.
The MMSF3P02HDR2 is a robust and reliable device, it is designed to operate efficiently in high-power applications and is extremely energy-efficient. It is a low-cost solution for motor control, power management, and power conversion applications. It is also RoHS compliant and is an excellent choice for today\'s high-efficiency designs.
The specific data is subject to PDF, and the above content is for reference
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