MMSF3P02HDR2G Allicdata Electronics
Allicdata Part #:

MMSF3P02HDR2GOSTR-ND

Manufacturer Part#:

MMSF3P02HDR2G

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 5.6A 8-SOIC
More Detail: P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: MMSF3P02HDR2G datasheetMMSF3P02HDR2G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.40065
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The application field and working principle of MMSF3P02HDR2G is an important subject in the Transistors - FETs, MOSFETs - Single field. It is among the most widely used mosfet due to its high efficiency and robustness. In this article, we will discuss the typical application field and working principle of the MMSF3P02HDR2G.

MMSF3P02HDR2G is a single N-channel, logic level field-effect transistor (FET) with a maximum power rating of 12.5 A, 15 V and a total gate charge of 30 nC. It is designed with a special gate tha The features of this chip are a low on-resistance of 16 mOhm, a low gate capacitance of 17 pF, and an operating temperature range of -55 to +125 C. MMS3F3P02HDR2G is also suitable for high speed switching due to its low power consumption.

MMSF3P02HDR2G is mainly used in low side switching applications such as DC motor control, switchmode power supplies and DC-DC conversion. This chip is commonly used in load switches and motor control applications, as it allows for high frequency operation and low power consumption. In addition, the MMS3F3P02HDR2G is suitable for applications involving high voltages, as it can withstand up to 25 V.

The MMSF3P02HDR2G operates as an enhancement transistor device. When the gate voltage is applied, holes are attracted to the gate and form an inversion layer near the drain. The resulting conductive channel between the source and the drain conducts current. When the gate voltage drops below the threshold value, the charge carriers are repelled and the channel is shut off and no further current can pass through the transistor. The MMSF3P02HDR2G thus allows for precise current regulation and a wide range of switching speed, depending on the gate voltage.

To ensure reliable operation and minimize electrical noise in sensitive circuit environments, the MMSF3P02HDR2G has two separate grounding pins for the gate and the source. This chip does not require a heatsink and the package is hermetically sealed for superior reliability. As the package is corrosion resistant, the MMS3F3P02HDR2G can withstand a wide range of ambient temperatures.

In summary, MMSF3P02HDR2G is a single N-channel logic level FET suitable for a wide range of applications, including DC motor control, switchmode power supplies and DC-DC conversion. It features low on-resistance and gate capacitance making it ideal for high speed switching applications. It operates as an enhancement transistor and features two separate grounding pins for the gate and the source and a hermetically sealed package. The MMSF3P02HDR2G can withstand up to 25 V and an operating temperature range of -55 to +125 C.

The specific data is subject to PDF, and the above content is for reference

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