Allicdata Part #: | MMSF7P03HDR2-ND |
Manufacturer Part#: |
MMSF7P03HDR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 7A 8-SOIC |
More Detail: | P-Channel 30V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO... |
DataSheet: | MMSF7P03HDR2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75.8nC @ 6V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MMSF7P03HDR2 is a single transistor designed to work as a field-effect transistor (FET). It is a type of transistor that uses an electric field instead of a base current in order to control current between two terminals called the source and the drain. It is also called an insulated-gate field-effect transistor (IGFET) or metal–oxide–semiconductor field-effect transistor (MOSFET). In contrast to a BJT, where current is evenly distributed between the collector and emitter, the current in an FET is completely dependent upon the voltage of the gate terminal.
Overview
The MMSF7P03HDR2 is a single FET developed by Toshiba Semiconductor. It is designed for power circuit applications and is capable of handling currents up to 8A (Drain Current). It can function as a single transistor or be used in a linear series of transistors to increase the control and output capabilities. The FET is provided in a SOP (Small Outline Package) and is designed to be surface mounted.
Operation
The primary function of the MMSF7P03HDR2 is to provide a variable current path between the drain and the source. This is achieved by controlling the capacitance between the gate and the channel of the FET. When a voltage is applied to the gate, it creates an electric field. This field then changes the characteristics of the channel allowing current to flow through the device. The amount of current is dependent upon the voltage applied to the gate. The voltage applied to the gate can range from 0V to the Vds (Maximum Drain-Source Voltage) of the device.
Applications
The MMSF7P03HDR2 is primarily designed for use in power circuits. It can be used in various power electronic applications such as DC/DC converters, switching power supplies, motor drives and LED lighting. It is also used in audio and video amplifiers, LED dimmers, and solar inverters. The FET is designed to handle currents up to 8A, so it is suitable for high-current applications.
Conclusion
The MMSF7P03HDR2 is a single FET designed for power circuit applications. It is capable of handling currents up to 8A and is provided in a SOP package for surface mounting. The device is used in a variety of applications, such as DC/DC converters, switching power supplies, motor drives, LED lighting and audio/video amplifiers. The FET operates by controlling the capacitance between the gate and channel in response to voltage applied to the gate, thus providing a variable current path between the drain and the source.
The specific data is subject to PDF, and the above content is for reference
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