MP4KE11AE3

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A Transient Voltage Suppressor diode, or TVS diode, is an electronic component that prevents surges in current or voltage from damaging electronic equipment. The device works by absorbing the energy of a high-voltage surge and sending it to the ground. The MP4KE11AE3 is a type of TVS diode, designed to provide protection against high-voltage transients. It is manufactured by STMicroelectronics and is available in a variety of packages.

The MP4KE11AE3 diode has a breakdown voltage of 11 V as well as low capacitance of 1 pF. This makes it well-suited to applications where high-speed switching transients must be suppressed or clamped, such as on USB ports and data lines. It is used in applications such as computers, digital devices, and automotive power electronics.

The working principle behind the MP4KE11AE3 is based on the principle of the avalanche breakdown. When an electrical field is applied to a semiconductor, the voltage at which the charge carriers are accelerated enough to cause breakdown is called the breakdown voltage. In the case of a TVS diode, when the applied voltage exceeds the breakdown voltage, the entire diode will avalanche and absorb the energy of the surge.

The MP4KE11AE3 is designed to operate as a Zener diode in reverse bias. It has a small forward voltage drop, which is beneficial for protecting power lines from transients. It has an operating temperature range of -65◦C to 150◦C, and an insulation resistance of 100 GΩ. This makes it suitable for applications in automotive, industrial, and other harsh environments.

The MP4KE11AE3 has an ultra-low leakage current, making it well-suited for protecting data lines. It can dissipate up to 8A peak current and 4A sustained current without damage, allowing it to protect against larger surges. The device also has low capacitance, enabling it to clamp high-frequency transients faster than other devices.

In summary, the MP4KE11AE3 is a type of TVS diode that is used to protect against high-voltage transients. It has a breakdown voltage of 11 V and a low capacitance of 1 pF, making it suitable for fast switching applications. The device is designed to operate as a Zener diode in reverse bias and has an operating temperature range of -65◦C to 150◦C, and an insulation resistance of 100 GΩ. It is able to dissipate up to 8A peak current and 4A sustained current without damage and has a low capacitance, allowing it to clamp high-frequency transients quickly.

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