
Allicdata Part #: | MPSA10-ND |
Manufacturer Part#: |
MPSA10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 5µA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The MPSA10 is a commonly used type of single enigned bipolar transistor, often referred to as an NPN transistor. It is a voltage-controlled device that is highly versatile in its wide range of applications. This article will provide an overview of the MPSA10, as well as its working principle, and explain some of the common applications.
The MPSA10 is a three-terminal transistor device with a base, emitter, and collector, in which the emitter is connected to the emitter tab. It is constructed as an integrated circuit with a silicon substrate, in which two isolated N-type layers over a P-type layer form the base collector and base regions. In between these active layers, a P-type layer forms the isolation layer.
The working principle of the MPSA10 is based on the dynamic amplification of current through the transistor. With the base and the collector connected, when an input current is applied to the base, it creates an electric field between the base and collector, resulting in a voltage drop across the base-collector junction. This voltage change, in turn, causes current to flow from the collector to the emitter, which amplifies the input current. This is known as the collector current gain. In addition, the MPSA10 also has a high characteristic breakdown voltage and a low forward voltage, making it suitable for switching applications.
Given its wide range of applications, the MPSA10 is commonly used in amplifiers, switches, and other electronic designs. In amplifiers, the MPSA10 is used to boost a weak signal by producing a larger output signal. This is due to the voltage drop across the base-collector junction that amplifies the input current. In switching applications, it is used to quickly switch an electronic device between two different states, such as an on or off position. The MPSA10 is also used in designs that require a low input impedance, such as radio receivers, as its design limits the amount of current drawn from the circuit.
The MPSA10 is a widely used single enigned bipolar transistor, with a wide range of applications. Its operation is based on the dynamic amplification of current through its three-terminal transistor device, with a base, collector, and emitter. Commonly used in amplifiers, switches, and other designs, it has a high characteristic breakdown voltage and a low forward voltage, making it suitable for switching applications. Ultimately, the MPSA10 is a versatile device, with many possible applications.
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MPSA42,412 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 300V 0.1A SOT54... |
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MPSA06RL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 80V 0.5A TO-92B... |
MPSA06,126 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 80V 0.5A SOT54B... |
MPSA63RLRMG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 30V 0.5A T... |
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