
Allicdata Part #: | MPSA92,412-ND |
Manufacturer Part#: |
MPSA92,412 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 300V 0.1A SOT54 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 100mA 50MHz 625m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 30mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA92 |
Description
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The MPSA92,412 is a single - bipolar junction transistor (BJT) developed to address the need for power switching applications, particularly those requiring fast switching. The device is capable of operating up to an output power of 30A and support voltage of up to 400V. Additionally, the MPSA92,412 includes an integrated over-temperature protection function for protection against thermal runaway. The MPSA92,412 is a NPN type transistor, meaning that the collector is the emitter region, the emitter is the base region and the base is the collector region. It is a two-terminal device, meaning that it has two connection terminals, one of which is the emitter and the other is the collector. The two terminals are connected to form a bipolar junction between them; this allows current to flow between the two regions, with the magnitude of the current dependant on the applied voltage. In terms of the operating principles of the MPSA92,412, it is a four-layer device. The base region is the fourth layer, the emitter and collector are the third and second layers respectively and the gate region is the first layer. The gate region consists of a dielectric layer, which acts as a barrier between the base region and the collector and emitter. When the applied gate voltage is increased, current begins to flow between the base and the emitter and collector regions, allowing the transistor to switch on. In terms of applications, the MPSA92,412 is ideal for switched-mode power supplies, motor control, DC-DC converters, H-bridge circuits and lighting control. It can also be used in automotive applications such as engine control, starter relays and sensors. Many other applications benefit from the small size and excellent operating characteristics of the MPSA92,412, making it an ideal choice for a variety of projects. Thanks to its intrinsic features and characteristics, the MPSA92,412 is able to provide high performance in even the most demanding of applications. Its excellent transient response allows for fast switching speeds, and its low saturation voltage makes it ideal for applications requiring high efficiency. Its high frequency response also allows for fast information processing, making it suitable for use in digital circuits. In addition to its excellent performance, the MPSA92,412 is a highly reliable device. Its integrated protection circuit allows it to operate efficiently and safely even in extreme conditions, and its robust packaging ensures that it can withstand shock, vibration and temperature extremes. This makes it suitable for use in a wide range of applications and environments.Overall, the MPSA92,412 is a versatile single-bipolar junction transistor designed to meet a wide range of power switching applications. Its fast switching capabilities, excellent transient performance, high frequency response and robust packaging make it a great choice for a variety of projects. Additionally, its integrated protection circuit ensures that it operates safely and reliably in challenging circumstances.The specific data is subject to PDF, and the above content is for reference
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