MPSA42,412

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 30mA, 10V
Power - Max:	500mW
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	MPSA42

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MPSA42, 412 is a single bipolar junction transistor (BJT) type high-gain transistor. It is a npn-transistor meaning that the majority carriers are negatively charged holes. It is widely used in amplifier applications, particularly for pre- and power amplifiers, as well as for switching and protection applications. The MPSA42, 412 is designed and manufactured to support high power transistor applications requiring high voltage and current capabilities. It has a Beta rating of 160 and a collector current of 12 Amps which makes it suitable for applications that require high switching power. The transistor has a wide range of applications, including relays, motors, transistors, and radio and television sets. MPSA42, 412 features optimal design with a reduced form factor with a smaller package. It has a low saturation voltage of 0.6V, and the power dissipation of 150W max. This allows the transistor to operate more efficiently than other bipolar transistors. When it comes to the working principle of the MPSA42, 412, it is driven by an increase in the base-emitter junction current. When the base current is increased, the junction current is increased, and therefore the collector current is also increased. This makes the BJT operate as an amplifier. The increased current in the junction also increases the voltage drop across the collector-emitter junction, thus increasing the collector-emitter voltage. The working principle of the MPSA42, 412 can further be explained in terms of the PNP reverses the above process. When the base current is decreased, the junction current is decreased, and the collector current is decreased. This makes the BJT operate as an amplifier with a voltage gain opposite to that of an npn transistor. The MPSA42, 412 is designed using high-quality materials and is also designed to be resistant to extreme thermal conditions. In addition, it is not affected by power transients. This makes the transistor reliable and suitable for applications that require a long-term performance. The MPSA42, 412 is an important component in the design of high-voltage and current applications. Its wide application range makes it ideal for driving relays and motors, as well as for radio and television sets. With its Beta rating of 160, it is suitable for use in applications that require high switching power and performance. Its reduced form factor ensures its compatibility with smaller form factor applications. In conclusion, the MPSA42, 412 is a single bipolar junction transistor designed for high current and voltage applications. It features a wide range of applications, including relays, motors, transistors, and radio and television sets. It is designed with high-quality materials and its reduced form factor ensures its compatibility with smaller form factor applications. The MPSA42, 412 is an important component in the design of high-voltage and current applications, and its Beta value of 160 makes it suitable for use in applications that require high-switching power.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description