MPSA42,116 Allicdata Electronics
Allicdata Part #:

MPSA42,116-ND

Manufacturer Part#:

MPSA42,116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 300V 0.1A SOT54
More Detail: Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 500m...
DataSheet: MPSA42,116 datasheetMPSA42,116 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 500mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA42
Description

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The MPSA42,116 is a bipolar junction transistor; more specifically, a single transistor. It is a commonly used NPN BJT transistor, and as such, has many applications. It is used for general-purpose switch and amplifier applications, such as audio amplifiers, signal switching, and signal control. It is also used in a number of more specialized applications, such as computer CPU control and interface design.

The transistor is made up of a P-type layer, an N-type layer, and a base layer. The layers are connected together by an epitaxial diffusion process. The emitter, base, and collectors are then connected together using an electrical bond, creating the transistor\'s structure. When voltage is applied to the transistor\'s base, its emitter emits electrons, creating a current between the base and collector. This current can then be used to control or amplify a signal.

In the case of the MPSA42,116, the current gain of the transistor is relatively high, with a minimum of 105. It also has a collector-emitter breakdown voltage of 40 volts and a collector-emitter saturation voltage of 1.4 volts. The maximum voltage between collector and emitter is also higher than for most other transistors, ranging up to 100 volts. Furthermore, the power dissipation of the device is relatively high, at up to 200 mW.

The MPSA42,116 can be used for many common electronic applications, such as powering motors, controlling relays, and amplifying signals. It has also been used in many more specialized applications, such as magnetic resonance imaging equipment, automotive systems, and RFID tags. This versatility makes the MPSA42,116 an ideal choice for any electronic circuitry design.

In addition to its versatility, the MPSA42,116 operates in a wide range of temperatures, from -65 to +175°C. This makes it suitable for both commercial and industrial applications. Furthermore, the device\'s structure is also very robust and can hold up well against mechanical shock and vibration. For these reasons, the MPSA42,116 is a very reliable device and can be trusted to perform reliably even in challenging application environments.

To sum up, the MPSA42,116 is a common NPN BJT transistor that is suitable for many applications, from powering motors to amplifying signals. It is highly reliable and operates in a wide range of temperatures, making it very versatile for any electronic design. Its high current gain, breakdown and saturation voltages, and power dissipation make it an ideal choice for many commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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