MPSA64RLRM Allicdata Electronics
Allicdata Part #:

MPSA64RLRM-ND

Manufacturer Part#:

MPSA64RLRM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MPSA64RLRM datasheetMPSA64RLRM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA64
Description

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Bipolar junction transistors (BJTs) are widely used in many electronic applications due to their low cost, high input impedance, and high current gain. One type of BJT is the Miniature Plastic Surface Mounted (MPSA64RLRM) transistor. This type of transistor can be used in many different types of applications ranging from power management, switching and logic circuits, audio and video amplifiers, and RF circuits.

The MPSA64RLRM is a PNP bipolar junction transistor with a SOT-223 package. It has a collector-emitter voltage of -60V and a collector current rating of -2A. The transistor has an hFE gain of 250 and a DC current gain of 200. Additionally, the device offers fast switching capabilities with a maximum operating frequency of 600MHz.

The MPSA64RLRM can be used in many different types of applications. One application is in power management circuits. This type of circuit is used to control the amount of power supplied to other circuits. The MPSA64RLRM can be used to control the voltage level of the power supply and to switch power from one circuit to another. It is also used in switching circuits, where the transistor is used to switch between two different voltages levels. In logic circuits, the transistor acts as a gate to determine if a certain voltage or current level is present.

The working principle of the MPSA64RLRM is based on the energy band diagram of the device. In the N-type semiconductor material, there are four energy bands – conduction band, valence band, fermi level, and forbidden gap. In the P-type semiconductor material, there are three energy bands – conduction band, valence band, and forbidden gap. The semiconductor material of the transistor acts as an insulator when no external current is applied to the device.

When a voltage is applied to the collector and the emitter of the transistor, the electrons in the N-type material are attracted and flow to the P-type material, while the holes in the P-type material are attracted and flow to the N-type material. This process creates a current flow in the transistor and thus creates a voltage gain. The current flow can be controlled by changing the external bias resistance or the applied voltage to the device.

The MPSA64RLRM transistor is a common device used in many different applications. It is a versatile device that is used to control power, sensor signals, and logic circuits. The device is easy to use, and offers high efficiency, high gain, and fast switching capabilities. The working principle of the device is based on the energy band diagram, and can be used to control the amount of current flow through the device.

The specific data is subject to PDF, and the above content is for reference

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