MPSA63RLRPG Allicdata Electronics
Allicdata Part #:

MPSA63RLRPG-ND

Manufacturer Part#:

MPSA63RLRPG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MPSA63RLRPG datasheetMPSA63RLRPG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA63
Description

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The MPSA63RLRPG is an NPN Darlington transistor often used in high current/high gain applications such as driving lamps, relays, and more. It is ideally used as a switch between a low input voltage, usually microprocessors and their low power output, and a high voltage rating required for a load, such as a motor. It is a complimentary-pair of two transistors that can handle a moderately high current and deliver a high input impedance and low output impedance. The characteristics of the transistor are typified by low noise, low thermal runaway and high switching speeds.

MPSA63RLRPG transistors belong to the class of Bipolar Junction Transistors (BJTs). A BJT is basically a combination of two junction diodes formed with three alternating p-n layers of a semiconductor material (such as silicon or germanium). BJTs can be further categorized into different types depending on the configuration, such as NPN, PNP, and P-Channel, N-Channel. The MPSA63RLRPG is an NPN-type BJT, in which a N-type semiconductor material is sandwiched between two layers of P-type and emitters at both sides. An NPN type transistor is generally favored for high-current and high-voltage applications because it has less saturation voltage and has a greater ability to switch and drive more current.

The working principle of the MPSA63RLRPG transistor is based on the flow of electrons through the base. An electrical current is passed into the base region, which causes another current to flow from the collector to the emitter. When the signal is turned off, the current stops flowing from the collector to the emitter. The greater the current that flows into the base, the more current flows from the collector to the emitter and the higher the switching speed. This allows the transistor to control a higher current load because the collector can carry more current for a given input than an NPN transistor.

The MPSA63RLRPG transistor can be used in many different fields. It can be used to drive motors, relay, and lamps, and is commonly used in power converters, amplifiers, and motor controllers. It is also used in the automotive field as a switch, in home appliances such as vacuum cleaners, and in personal computers and other digital devices as an output stage. The MPSA63RLRPG is also often integrated with other components in an application-specific integrated circuit (ASIC) to increase the speed and efficiency of the circuit.

The MPSA63RLRPG is a good option for high-current and high-voltage applications because it has low saturation voltage and excellent switching speed. It is also well suited for power conversion applications because it has excellent high-temperature performance. While the MPSA63RLRPG is typically used in high current/high gain applications, it can also be used in low power applications where low power consumption is desired. Due to its high gain and low saturation voltage, it is particularly well suited for this purpose.

In conclusion, the MPSA63RLRPG is an NPN Darlington transistor well suited for high current/high gain applications. It is categorized as a Bipolar Junction Transistor (BJT), more precisely an NPN transistor, and it can be used in many different fields to control a higher current load. It is an excellent choice for power conversion applications due to its high gain and low saturation voltage, and it can be integrated with other components in an ASIC for higher speed and efficiency.

The specific data is subject to PDF, and the above content is for reference

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