MPSA13_D26Z

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MPSA13_D26Z is a type of single bipolar junction transistor (BJT). It has an NPN silicon base structure and has a 0.4A rated current. The power dissipation of the transistor is a maximum of 500mW. The current gain of the transistor is 150-500. This type of transistor is mostly used for switching applications and in audio pre-amplifiers.

In general, the application field of MPSA13_D26Z is switching applications and audio pre-amplifiers. It is a high-power device that can be used in a variety of applications, from direct drive transistors to switching. It can be used in DC-to-DC converters, interfacing circuits, audio amplifiers, video amplifiers, amplifier/drivers, logic gates, and many more.

The working principle of MPSA13_D26Z is that it is a voltage-controlled device. It uses an input voltage to control the current flowing between the emitter and collector terminals. When the base voltage is increased, the base-to-emitter current increases. This increases the collector-to-emitter current, which in turn increases the collector voltage. In this way, the transistor can be used as an amplifier, to amplify a small AC or DC signal.

In order to use MPSA13_D26Z, it is important to know the base-emitter and collector-base breakdown voltages of the transistor. The base-emitter breakdown voltage of the transistor is 6V, and the collector-base breakdown voltage is 80V. Moreover, the maximum collector-to-base voltage is 80V and the collector-to-emitter voltage is 40V. The junction temperature is 150 degrees Celsius.

The MPSA13_D26Z is a versatile, cost-effective transistor that can be used in a variety of applications. It has a high power handling ability and is suitable for use in audio pre-amplifiers, switching applications, and other high-voltage applications. It is a great choice for those looking for a reliable, robust transistor with a wide application field.

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