Allicdata Part #: | MPSA13RLRMGOSTB-ND |
Manufacturer Part#: |
MPSA13RLRMG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 30V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 500m... |
DataSheet: | MPSA13RLRMG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA13 |
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MPSA13RLRMG Application Field and Working Principle
The MPSA13RLRMG Transistor (Bipolar Junction Transistor or BJT) is a single stage component. It is a PNP transistor with a maximum collector-base voltage rating of 45V, and a maximum collector current rating of 0.2A. It also has a turn-off time of 50nS, a collector–emitter saturation voltage of 0.2V, and an operating temperature range of -55℃ to +150℃.
The MPSA13RLRMG is a useful component in a variety of applications such as current and voltage regulation, switching, amplifier and logic circuits. It is suitable for use in logic circuits and other low power applications.
Working Principle
The MPSA13RLRMG is a structured N-channel, Lateral PNP Transistor. It operates in three regions which are cutoff, active and saturation. In pure cutoff state, the voltage across base and emitter is zero, there is no bias controlling current flow in collector and emitter. Therefore no current flows from collector to emitter. At pure active state, the voltage across base and emitter is less than cut off voltage, it can control the current flow in collector and emitter. At saturation state, the voltage across the base and emitter is greater than its cut-off voltage and the current flow in collector and emitter is limited by voltage of collector and emitter junction. Its current flow depends on base current and resistance of collector and emitter.
Applications
The MPSA13RLRMG transistor is used in many different types of applications. It is commonly used in voltage regulation circuits, current regulation circuits, switching circuits, amplifier circuits and logic circuits.
The MPSA13RLRMG is a suitable option for applications requiring low collector-emitter saturation voltage, high input impedance, and fast response time. It can be used for applications that require large current gain, such as amplifiers and switching circuits. It is also suitable for use in logic circuits and other low power applications.
The MPSA13RLRMG transistor can be used in a variety of different circuits, such as voltage regulators, current regulators, switching and amplifier circuits, and logic circuits. It is capable of providing high input impedance and a fast response time. Its low collector-emitter saturation voltage makes it a suitable choice for applications requiring high current gains, such as amplifiers and switching circuits.
Conclusion
The MPSA13RLRMG is a single stage PNP transistor that is ideally suited for a variety of applications such as voltage regulation, current regulation, switching, amplifier and logic circuits. It has a low collector-emitter saturation voltage which makes it suitable for applications that require high current gains, such as amplifiers and switching circuits. It also has a fast response time and high input impedance. The MPSA13RLRMG is a versatile component that can be used for many different applications.
The specific data is subject to PDF, and the above content is for reference
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