MPSA29-D26Z Allicdata Electronics
Allicdata Part #:

MPSA29-D26ZTR-ND

Manufacturer Part#:

MPSA29-D26Z

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 800...
DataSheet: MPSA29-D26Z datasheetMPSA29-D26Z Datasheet/PDF
Quantity: 1000
2000 +: $ 0.05894
6000 +: $ 0.05567
10000 +: $ 0.05075
50000 +: $ 0.04366
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA29
Description

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The MPSA29-D26Z is a silicon planar epitaxial NPN transistor mainly used for switching signals at low-signal levels and for general-purpose amplification. The transistor belongs to the Single, Bipolar (BJT) transistors family. This type of transistor is designed for low-power operation, and is classified as an efficient device for the intrusion of signals at low levels. This type of transistor is found mainly in household electronic appliances, such as televisions, stereos and computers.

The MPSA29-D26Z transistor is a NPN type device with a collector-to-emitter breakdown voltage of 30V and a continuous collector current of 150mA. The current gain of this transistor is typically 450. The structure of the transistor includes two N-type and one P-type layers of semiconductor material, with semiconductor connections between them called emitter, base and collector. The emitter-base junction is forward biased and the collector-base junction is reverse biased. When current is passed through the base junction, the base-emitter junction turns on and allows current to flow from the emitter to the collector. This flow of current through the transistor is what creates the amplification of signals. The base current controls the current flow from the collector to the emitter, making this type of transistor effective at amplification of low-level signals.

The MPSA29-D26Z is capable of providing excellent linear amplification in a wide range of applications, from audio to computer interfacing and from power to digital switch control. It has a wide voltage range of 30V and can operate in temperature range of -65 to 150C. It also features excellent thermal stability and noise performance. The MPSA29-D26Z is a versatile device and can be used in a variety of equipment in both commercial and industrial applications.

This device can be used in applications such as amplifying and switching signals, signal distortion prevention and control, the construction of AC power supplies, signal power conditioning and signal level conversion. It is also often used in circuit designs that requires signal amplification with low noise levels, such as receiver and amplifier circuits. Its excellent linear performance and stability makes it suitable for use in audio amplifiers, signal conversion circuits and signal/voltage monitoring.

The MPSA29-D26Z provides efficient and reliable operation for applications requiring low signal-level amplification and switching. The transistor is designed for excellent lateral resistance to temperature and voltage fluctuations and provides a good noise and current performance. Its ability to work in a wide range of temperature and voltage makes it a suitable choice for a range of applications and devices, from consumer electronics to industrial systems.

The specific data is subject to PDF, and the above content is for reference

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