MPSA42ZL1 Allicdata Electronics
Allicdata Part #:

MPSA42ZL1-ND

Manufacturer Part#:

MPSA42ZL1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625m...
DataSheet: MPSA42ZL1 datasheetMPSA42ZL1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA42
Description

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The MPSA42ZL1 is a transistor from the single bipolar junction transistor (BJT) family. It is a high power transistor package designed for the electronic industry and suitable for a variety of applications. This device is an NPN epitaxial silicon transistor that can be used as an amplifier and in switch mode applications.

MPSA42ZL1’s package consists of a hermetically sealed metal-ceramic package, with a gate height of 3mm and an overall length of 4mm. It is qualified to AEC-Q101 and RoHS compliant. The transistor is optimized for low noise and high gain and is rated for VCE(sat) of 50V with a higher maximum collector current and dissipation capability. It has a higher current gain marginal to other transistors.

In terms of its structure and composition, the MPSA42ZL1 is an NPN bipolar transistor that consists of three regions: collector, base, and emitter. It is composed of a doped base region which assists in controlling current flow between the emitter and collector regions. The collector region is heavily doped and contains the N-type semiconductor material. The base region is lightly doped and composed of a P-type semiconductor material. The emitter region is highly doped with the N-type semiconductor material and is located between the base and the collector.

The MPSA42ZL1 is most commonly used for audio and switching applications. This helps reduce the noise associated with audio circuits and also provides a higher reliability output. It can also be used for voltage regulator module designs due to its good characteristics such as high current rating and high breakdown voltage. It is also an ideal choice for RF power amplifier applications because of its low noise levels, affordability, and its overall reliability.

MPSA42ZL1 transistors work by allowing current to flow between the collector and emitter in the presence of a voltage applied to the base. When a voltage is applied to the base, it creates a junction between the base and collector which allows a current flow path. As the voltage is increased further, the current flow also increases and this is called as the active region of the transistor. Once the voltage reaches the cutoff voltage, there will be no current flow between the collector and emitter anymore. By regulating this voltage and current, the MPSA42ZL1 can be used for various applications.

Overall, the MPSA42ZL1 transistor is a reliable, cost-effective and efficient single bipolar junction transistor (BJT) designed for the electronic industry. It is suitable for use in audio and switching applications, voltage regulator module designs, and RF power amplifier applications. Furthermore, the transistor is composed of three regions—collector, base, and emitter—allowing for current flow in the presence of a voltage applied to the base.

The specific data is subject to PDF, and the above content is for reference

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