MPSA64_D75Z Allicdata Electronics
Allicdata Part #:

MPSA64_D75Z-ND

Manufacturer Part#:

MPSA64_D75Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 1.2A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 1.2A...
DataSheet: MPSA64_D75Z datasheetMPSA64_D75Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA64
Description

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MPSA64_D75Z is a type of NPN bipolar junction transistor (BJT), commonly referred to as single transistors, designed for use as an amplifier and switch device. It finds a wide range of applications in communication, power and industrial applications. The transistor features a TO-220 package, a current gain range from 0.3 to 1.3 @ I C = 1 mA, and a collector current drain range of 0.3 - 1.3 mA.

In circuit design, MPSA64_D75Z is often part of a metal oxide semiconductor field-effect transistor (MOSFET). In this circuit, the NPN transistor functions as an amplifier by controlling the output of a voltage source. It is important to note that, while an NPN BJT is able to control voltages up to a few hundred volts, the MOSFET is capable of controlling larger voltages up to several thousand volts. This type of transistor also has other applications such as current sensing, motor control, and logic level translation.

The working principle of MPSA64_D75Z is the same as any other BJT. It consists of three terminals: the base, the collector and the emitter. A current flows from the collector to the emitter when a voltage is applied to the base. This current is known as the collector current. This current depends on the voltage applied between the base and the emitter, also known as the base voltage.

The current gain of the device, also known as h FE , can be calculated using the following equation: h FE = I C /I E . The h FE of the MPSA64_D75Z is typically between 0.3 and 1.3, depending on the collector current. The collector current drain of the device is also specified and can typically range from 0.3 to 1.3 mA.

The MPSA64_D75Z is commonly used in a variety of communication, power and industrial applications. It is commonly used as an amplifier, switch and current sensing device. It is also used in motor control and logic level translation circuits. Due to its wide current gain range, low power consumption and low voltage drop, it is ideal for applications where size and power consumption is critical.

In conclusion, the MPSA64_D75Z is a type of NPN bipolar junction transistor designed for use as an amplifier and switch device. It features a TO-220 package, a current gain range from 0.3 to 1.3 @ I C = 1 mA, and a collector current drain range of 0.3 - 1.3 mA. It is commonly used in communication, power and industrial applications. This device is highly versatile and can be used in many different types of circuits. As such, it is an important component in the design of circuits in many different industries.

The specific data is subject to PDF, and the above content is for reference

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