MR25H256ACDF

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MR25H256ACDF Application Field and Working Principle

MR25H256ACDF belongs to the Memory family of electronic components. It is a multi-level cell (MLC) double data rate 3 (DDR3) static random access memory (SRAM) device with a rank density of 256Mb. And it allows extremely low-power operation thanks to its embedded on-die termination. This device also has a very high write speed for improved system performance.

Memory Currently Used

In many electronic product applications, MR25H256ACDF is widely used. As different semiconductor processes are entered, the requirements for memory applications are becoming more diverse, and memory needs have become more demanding. Therefore, Memory is one of the most commonly used electronic components.

MR25H256ACDF Introduce

MR25H256ACDF is a low-power, low-voltage, 256-Mbit static random access memory device that includes 8M words by 32 bits of SRAM cell arrays. It can sustain a temperature range of 0°C to 70°C for normal operation. Inputs are compatible with both 5V CMOS and 3.3V LVTTL. This device supports commercial and industrial temperature ranges.

Working Principle of MR25H256ACDF

The MR25H256ACDF static random access memory device works on the principle of static random access memory. It is organized as 8M words by 32 bits. The device accesses data by using the four internal row and eight column address pins. The data is transferred in and out of the device on the 32-bit data output pins (DATAOUT[31:0]).

The MR25H256ACDF device is accessed initially by presenting the four internal row address pins (Row_A2:0) and enabling one of the two internal chip enable pins (WE or CE). Depending on the logic level of one of these chip enable pins, a write or read operation is executed. A write operation is accomplished by presenting the appropriate row and column address and placing the data on the data input pins (DATAIN[31:0]).

When the WE and CE pins both are enabled and the CS pin is enabled, the MR25H256ACDF device will initiate a write operation. The write operation can be done anytime after the WEpin is enabled and the appropriate row, column and data inputs are presented. The CS pin does not need to be enabled during a write cycle.

A Read operation is accomplished by placing the appropriate row, and column address inputs and enabling the Chip Enable/Read pin (CE/RD) and using the data from the data output pins (DATAOUT[31:0]). This operation should be performed after the CE/RD pin has been enabled and the appropriate row, column address inputs have been presented.

Application Fields

MR25H256ACDF Memory is widely used. It can be used in industrial controllers, handheld computers, servers, networking equipment, and other industrial applications where long operation times and low power consumption are desired. It is also used in computers and cellular phones as well as other consumer applications.

MR25H256ACDF Memory is on the cutting edge of memory device technology, and will continue to be used in a variety of electronic and industrial applications. This device is engineered to be reliable, delivering an improved system performance that is designed to last for the long-term.

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