Allicdata Part #: | 819-1038-ND |
Manufacturer Part#: |
MR25H256CDF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Everspin Technologies Inc. |
Short Description: | IC RAM 256K SPI 40MHZ 8DFN |
More Detail: | MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x... |
DataSheet: | MR25H256CDF Datasheet/PDF |
Quantity: | 2059 |
Series: | -- |
Packaging: | Tray |
Part Status: | Not For New Designs |
Memory Type: | Non-Volatile |
Memory Format: | RAM |
Technology: | MRAM (Magnetoresistive RAM) |
Memory Size: | 256Kb (32K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN (5x6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technologies are a critical component in almost every electronic device. Increasing demand for higher density but low power memories have driven the development of innovative technologies such as MR25H256CDF. Since its introduction in the market, MR25H256CDF has become one of the most popular memory products in the market due to its high performing, reliable and cost-efficient features.
MR25H256CDF Overview
The MR25H256CDF is a high density, low power memory device developed by ROHM semiconductor. It is a 2Mb memory device composed of 32 blocks, each block consisting of 256K-bit. Each bit of the memory device is stored in a 4-level charge trap Flash cell (CTF) consisting of two transistors, word lines (WLs) and buried bit lines (BBLs) that enable multi-bit storage. The amount of data stored in one block is 32K x 16words, or 512Kbytes and structured x8 or x16 organization.
Each block of MR25H256CDF is provided with a 256K-bit reprogrammable non-volatile memory (NVM). All the blocks come with a built-in error detection and correction circuit (EDC) to guarantee the data integrity. The EDC employs a 16-bit CRC for error detection, and a 3-bit correction capability for up to 4-bit errors in other blocks.
The chip supports page programming, page read and page erase operations. Single page programming time is typically 3.5 milliseconds. The device also features 5-byte addressing capability and up to 528 bytes of page size.
MR25H256CDF Applications
MR25H256CDF has been successfully used in several applications. It is typically used in applications where high density, low power consumption and fast data access are required.
The device has been widely used in aircrafts and satellites as a base storage element. It is also used in remote data storage systems, embedded memory and other industrial applications.
The device is used in automotive applications as well. Automotive ECUs and other applications need high speed and low power consumption, MR25H256CDF is currently the best solution for that.
The device can also be used in consumer electronics. With its high density and low power consumption, it is perfect for mobile phones, tablets and other consumer electronic devices.
MR25H256CDF Working Principle
The MR25H256CDF operates in four different modes. These are read mode, program mode, erase mode and standby mode.
In read mode, the device pulls a page of data from its internal memory and transfers it to the output port. Data can be read from any block by specifying the block address and the desired page. In program mode, the device will program the word line (WL) and block line (BL) signals to the specified values and write the desired data to the internal memory cell. In erase mode, it will erases the whole block.
In standby mode, the device is completely inactive and will draw only a fraction of the operating current. This reduces power consumption to a minimum.
The MR25H256CDF has two power supplies, one for the memory cell and one for the logic circuit. The logic power supply can be turned off during standby mode to save power. The device is controlled by an internal clock and is reset using an external reset pin.
The device also comes with a built-in error detection and correction circuit (EDC). The EDC is responsible for detecting and correcting errors that may occur while programming or reading data from the device. It uses 16-bit CRC checksum for error detection, and 3-bit correction capability for up to 4-bit errors in other blocks.
MR25H256CDF also has a page queue feature that enables the device to keep track of multiple pages being written or read simultaneously. This feature helps reduce the number of wait states and boosts the overall performance of the device.
Conclusion
MR25H256CDF is a high density, low power memory device designed for applications requiring high performance, reliability and cost-efficiency. It is primarily used in aircrafts and satellites, embedded memory for automotive ECU and other industrial applications. It can also be used in consumer electronic devices. The device operates in four different modes and is controlled by an internal clock and an external reset pin. It also comes with a built-in error detection and correction circuit and a page queue feature.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MR2535LRL | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 20V MICRODE BUT... |
MR2535LRLG | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 20V MICRODE BUT... |
MR2520L | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LG | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LRL | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LRLG | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LRLX | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LRLXG | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LX | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2520LXG | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 23V MICRODE BUT... |
MR2535L | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 20V MICRODE BUT... |
MR2535LG | ON Semicondu... | 0.0 $ | 1000 | TVS DIODE 20V MICRODE BUT... |
MR256D08BMA45 | Everspin Tec... | -- | 97 | IC RAM 256K PARALLEL 48FB... |
A16N-MR25 | Omron Automa... | 0.0 $ | 1000 | SWITCH PLATE E-STOP LOW S... |
A22N-MR25 | Omron Automa... | 0.0 $ | 1000 | LOW SPEED |
MR256A08BYS35 | Everspin Tec... | 3.82 $ | 207 | IC RAM 256K PARALLEL 44TS... |
MR256A08BCMA35 | Everspin Tec... | -- | 1075 | IC RAM 256K PARALLEL 48FB... |
MR25H256CDC | Everspin Tec... | -- | 1000 | IC RAM 256K SPI 40MHZ 8DF... |
MR25H10MDC | Everspin Tec... | 6.15 $ | 1000 | IC RAM 1M SPI 40MHZ 8DFNM... |
MR25H40CDF | Everspin Tec... | -- | 1000 | IC RAM 4M SPI 40MHZ 8DFNM... |
MR25H256MDC | Everspin Tec... | -- | 1000 | IC RAM 256K SPI 40MHZ 8DF... |
MR25H256ACDF | Everspin Tec... | -- | 803 | IC RAM 256K SPI 40MHZ 8DF... |
MR25H256AMDF | Everspin Tec... | 6.41 $ | 957 | IC RAM 256K SPI 40MHZ 8DF... |
MR25H256CDF | Everspin Tec... | -- | 2059 | IC RAM 256K SPI 40MHZ 8DF... |
MR25H40MDF | Everspin Tec... | -- | 95 | IC RAM 4M SPI 40MHZ 8DFNM... |
MR25H10CDC | Everspin Tec... | -- | 3543 | IC RAM 1M SPI 40MHZ 8DFNM... |
MR25H10CDF | Everspin Tec... | -- | 3280 | IC RAM 1M SPI 40MHZ 8DFNM... |
MR25H10MDF | Everspin Tec... | -- | 1347 | IC RAM 1M SPI 40MHZ 8DFNM... |
MR25H40CDC | Everspin Tec... | -- | 449 | IC RAM 4M SPI 40MHZ 8DFNM... |
MR256A08BSO35R | Everspin Tec... | 0.0 $ | 1000 | IC RAM 256K PARALLEL 32SO... |
MR256A08BSO35 | Everspin Tec... | 0.0 $ | 1000 | IC RAM 256K PARALLEL 32SO... |
MR256A08BCSO35 | Everspin Tec... | 0.0 $ | 1000 | IC RAM 256K PARALLEL 32SO... |
MR256A08BCSO35R | Everspin Tec... | 0.0 $ | 1000 | IC RAM 256K PARALLEL 32SO... |
MR25H40CDFR | Everspin Tec... | 7.01 $ | 1000 | IC RAM 4M SPI 40MHZ 8DFNM... |
MR256A08BCYS35 | Everspin Tec... | 3.69 $ | 1000 | IC RAM 256K PARALLEL 44TS... |
MR25H10MDCR | Everspin Tec... | 4.38 $ | 1000 | IC RAM 1M SPI 40MHZ 8DFNM... |
MR25H10MDFR | Everspin Tec... | 4.38 $ | 1000 | IC RAM 1M SPI 40MHZ 8DFNM... |
MR25H40MDFR | Everspin Tec... | 22.38 $ | 1000 | IC RAM 4M SPI 40MHZ 8DFNM... |
MR256A08BMA35R | Everspin Tec... | 3.18 $ | 1000 | IC RAM 256K PARALLEL 48FB... |
MR256A08BMA35 | Everspin Tec... | 3.23 $ | 1000 | IC RAM 256K PARALLEL 48FB... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...