MR256A08BSO35 Allicdata Electronics
Allicdata Part #:

819-1028-ND

Manufacturer Part#:

MR256A08BSO35

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 256K PARALLEL 32SOIC
More Detail: MRAM (Magnetoresistive RAM) Memory IC 256Kb (32K x...
DataSheet: MR256A08BSO35 datasheetMR256A08BSO35 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC
Description

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MR256A08BSO35 is a type of memory device that is widely used in the storage of data. It functions as a memory array with a read and write logic cells. It supports data access modes with single address r/w, sequential read, refresh, erase and program operations. This device can store up to 8 bits of data which are accessed by a single address. The MR256A08BSO35 works on the principle that it can store up to 8 bits of data into 256 memory cells. It also supports non-volatile memory which means that the stored data is retained even when power is removed from the circuit. Additionally, this device also supports a data retention of 15 years.

The application field of the MR256A08BSO35 is quite large. It is mainly used in the storage of data in various electronic devices. These devices can range from computers, digital cameras, mobile phones, gaming consoles, etc. This device is also used in a variety of automotive applications, such as instrument clusters, door locks and immobilizers. Additionally, it is also used in high-end medical devices such as ultrasound machines and imaging equipment. Lastly, this device is also used in industrial and military applications such as navigation systems and robotics.

The working principle of the MR256A08BSO35 is based on its architecture that comprises of 8 data bits, a single read/write logic cell and an address latch. The address latch captures the address for accessing the memory cells. The read/write logic cell then performs the operation of data read or write depending on the command. The read/write operation is performed in parallel with a single address providing access to 8 data bits. The 8 data bits are then written into the memory cell with the appropriate read/write command. The 8 data bits can also be read from the memory cell with the read command.

Furthermore, this device also features a range of features that provide advanced performance. These features include built-in error correction circuitry, low stand-by current, low power supply, data latch function, power off protection and device refresh. These features provide the MR256A08BSO35 with superior reliability and robustness in harsh environments. Additionally, the device is also equipped with advanced data retention and fast programming times.

In conclusion, the MR256A08BSO35 is a memory device that has various applications in the storage of data in various electronic and automotive devices. It works on the principle of writing 8 data bits into 256 memory cells with a single address latch capturing the address for accessing the memory cells. The device also comprises of various features such as error correction, low power supply, data latch and refresh to provide the device with superior reliability and robustness in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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