MT25QL256ABA8ESF-0SIT

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The MT25QL256ABA8ESF-0SIT is a 256Mbit (32Mbyte) non-volatile flash memory manufactured by Micron Technology. It is suitable for applications requiring low power and high storage capacity. It can be used for a variety of applications, ranging from embedded storage for industrial and consumer products to automotive applications.

The MT25QL256ABA8ESF-0SIT memory is an ideal choice for applications that require fast read and write speeds, low power consumption and a reliable storage solution. It is a three-Volt NAND-type memory which is designed to operate at low voltages (ranging from 2.7V to 3.6V) and temperatures (0°C to 70°C). It is available in a 4mmx20mm package with DDR interface, making it suitable for space-constrained applications such as digital cameras, voice recorders and MP3 players.

The device uses a triple-plane memory address system, which allows for fast access to any location in the memory array. The system uses two rows and one column to define each location in the memory array. The row is used to access the memory array, while the column is used to determine the byte within the memory cell. The memory device can store up to 256 Mbits (32 MBytes) of information, with a space for up to 512 Kbits (64 KBytes) of information per row.

The memory device is organized as eight banks of 32Mbit (4MByte) each. The memory can be accessed in the same way regardless of the size of the bank, allowing for a more efficient transfer of data between the device and the host processor.

The memory device also includes on-chip error detection and correction (EDC) logic that is used to detect and correct errors in stored data. This logic is implemented in hardware and can detect and correct single-bit errors in data stored in the memory device. This feature ensures that the data stored in the MT25QL256ABA8ESF-0SIT memory is always accurate and reliable.

The memory device also includes an on-chip ECC (Error Correction Code) feature. ECC is a technique for checking for and correcting errors in stored data. The ECC feature of the MT25QL256ABA8ESF-0SIT can correct up to 8 bit errors in a 256 byte block, making it ideal for applications that require high data integrity.

The MT25QL256ABA8ESF-0SIT memory also includes a five wire active-low interface. This interface allows the device to be connected to external hardware, such as PC hardware, to access the data stored in the memory array. The memory device also includes a low power standby mode that reduces the device\'s power consumption, making it ideal for portable applications.

The MT25QL256ABA8ESF-0SIT memory is an ideal choice for applications requiring high capacity, low power and fast access to stored data. The memory device\'s on-chip error detection and correction, ECC and low power standby mode, make it suitable for a variety of applications, ranging from embedded storage for industrial and consumer products, to automotive applications.

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