MT25QU128ABA1EW9-0SIT TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT25QU128ABA1EW9-0SIT TR is a kind of memory from Micron. It features a choice of flash memory densities from 1Gb to 256Gb and delivers speeds up to 3.2 times faster than the previous generation. As one of Micron’s highest-density memories, it is well suited for enterprise servers, data center applications, and other high-performance computing applications that require large amounts of data storage.

The MT25QU128ABA1EW9-0SIT TR is an Excellent performance with fast random read and write speeds. It is capable of delivering up to 3.2GB/s throughput and up to 30μs latency. Data retention up to 20 years. On-board encryption available.

In addition, The MT25QU128ABA1EW9-0SIT TR also features features such as secure erase, multiple DIE redundancy, and multiple DIMM redundancy, making it very attractive for enterprise mission-critical applications. Its advanced low-power design and temperature-sensing capabilities enable maximum energy savings in the data center.

The working principle of the MT25QU128ABA1EW9-0SIT TR is quite simple. It utilizes the built-in controller to access the memory cells in the flash memory chip using various commands. The controller is responsible for executing read and write commands, as well as erasing and programming new data into the cells. Data is stored in the flash memory chip as bits and can be read and written to on a byte-by-byte basis.

The MT25QU128ABA1EW9-0SIT TR has many advantages and makes it an ideal choice for users. Its combination of high density, low-power design, and fast read/write speeds makes it ideal for enterprise and data center applications, as well as other high-performance and power-efficient applications. As a result, users get the perfect balance of performance and energy efficiency in their memory.

The specific data is subject to PDF, and the above content is for reference