MT25QU128ABA8ESF-0SIT TR Allicdata Electronics
Allicdata Part #:

MT25QU128ABA8ESF-0SITTR-ND

Manufacturer Part#:

MT25QU128ABA8ESF-0SIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 133MHZ 16SOP2
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz ...
DataSheet: MT25QU128ABA8ESF-0SIT TR datasheetMT25QU128ABA8ESF-0SIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT25QU128ABA8ESF-0SIT has a wide range of applications and is an ideal option for many memory-intensive projects. This memory chip is a 3D NAND type, also known as Quad-Level Cell (QLC) NAND, and is well suited for various data-intensive applications. It supports a maximum capacity of 2TB, making it suitable for use in data-intensive applications such as data centers, enterprise storage, hyperscale storage, mobile data storage, and cloud storage.

MT25QU128ABA8ESF-0SIT memory chips offer fast random read/write speeds and are built for high endurance and better performance. They are capable of storing over 400GB of data per chip, making them suitable for various data-intensive applications. These memory chips have a low power consumption, making them an ideal choice for long term storage solutions.

MT25QU128ABA8ESF-0SIT memory chips are designed with the latest breakthroughs in the NAND flash industry. The chip utilizes the most cutting edge 3D memory cell architecture and advanced ECC to achieve best-in-class performance and reliability. The advanced ECC can correct up to 240 bits of error bits per 1K byte, and the 3D architecture provides improved read/write performance over traditional 2D memory cells. The memory chips can also be configured to support 16-bit or 32-bit data transmission, depending on the application requirements.

MT25QU128ABA8ESF-0SIT memory chips offer a wide range of features that make them an ideal choice for data-intensive applications. The chips are designed for better performance, typically delivering up to 400GB or over 1000IOPS of sustained random read/write speeds. They also come with various performance enhancements, such as SLC Cache and space-efficient error correction codes. Furthermore, the MT25QU128ABA8ESF-0SIT memory chips are highly reliable, and are rated for up to 100,000 program/erase endurance operations.

In conclusion, MT25QU128ABA8ESF-0SIT memory chips are a great choice for applications that require high levels of data storage and high performance. The chips are designed to deliver fast random read/write speeds and low power consumption, making them an ideal choice for long-term memory storage solutions. The chips also come with advanced ECC and SLC Cache features, making them highly reliable and highly efficient. Therefore, MT25QU128ABA8ESF-0SIT memory chips are well suited for data-intensive applications, such as data centers, enterprise storage, hyperscale storage, mobile storage, and cloud storage.

The specific data is subject to PDF, and the above content is for reference

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