MT25QL256ABA8ESF-MSIT

Series:	--
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	8ms, 2.8ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	16-SOP2

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MT25QL256ABA8ESF-MSIT Memory

MT25QL256ABA8ESF-MSIT memory is a type of non-volatile memory that stores data using electrical charges instead of traditional semiconductor-based transistors. Unlike regular semiconductor-based dynamic random access memory (DRAM), MT25QL256ABA8ESF-MSIT memory does not require a constant supply of power to retain its data. This makes it an ideal solution for applications such as flashing embedded systems, storing information, and logging data.MT25QL256ABA8ESF-MSIT memory was developed by M-Systems and is manufactured using their proprietary stacking technology. This stacking technology is similar to the process of stacking multiple layers in order to increase the amount of data stored in a specified space. The technology significantly increases the amount of data that can be stored in a limited physical space.The memory contains Flash cells, which are composed of two transistors or two logic gates. The Flash cells in the MT25QL256ABA8ESF-MSIT memory are programmed or written to with high voltage and they remain in the programmed or written state even if the power supply is removed. Data is stored in the F-TFS, a form of FLASH memory that utilises a non-volatile memory technology, making it especially useful for logs and other data that needs to be retained for a long period of time.MT25QL256ABA8ESF-MSIT memory is designed for data storage in harsh industrial environments. The memory is reliable and robust, and can withstand extreme temperatures and high levels of shock and vibration, making it ideal for industrial applications. The MT25QL256ABA8ESF-MSIT memory has a wide temperature range, from -40°C to +85°C, and can withstand more than 25,000 write/erase cycles before showing signs of wear and tear.MT25QL256ABA8ESF-MSIT memory is used in a wide range of applications. Medical applications such as patient monitoring and logging medical history are some of the most common uses. The memory can also be used in aviation and space exploration, automotive diagnostic equipment and instrumentation, network equipment and service providers, as well as other industries like telecommunications, automotive, military and aerospace.MT25QL256ABA8ESF-MSIT memory is capable of reading data at very high speeds. The memory can achieve read speeds of up to 170MB per second, while write speeds can reach 40MB per second. The memory features a robust security feature as well, making it an ideal choice for data storage applications where data integrity and security are crucial.MT25QL256ABA8ESF-MSIT memory also offers a number of advanced features including various block protection mechanisms, secure erase, versatile write protection and more. The memory also offers an integrated dynamic Test and Repair (DTR) mechanism for robust error detection, pointer shielding and automatic resource management.MT25QL256ABA8ESF-MSIT memory is designed specifically for industrial applications and is reliable, robust and able to withstand harsh conditions. It is a highly capable memory choice for applications requiring secure and reliable data storage. With its wide temperature range, fast read/write speeds, and advanced features, the MT25QL256ABA8ESF-MSIT memory is an excellent choice for mission-critical and other applications that need secure and reliable data storage.

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